発表論文/2012
高木・竹中研究室論文リスト:Index
2012年度 | 2011年度 | 2010年度 | 2009年度 | 2008年度 | 2007年以前
[査読のある学会誌の掲載論文] [査読のある国際学会での受諾論文] [国内学会・研究会]
2012年
査読のある学会誌の掲載論文
- S.-H. Kim, M. Yokoyama, N. Taoka, R. Iida, S.-H. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers
Appl. Phys. Exp. 5, 014201 (2012) - M. Takenaka and S. Takagi
Strain Engineering of SiGe Optical Modulators
IEEE J. Quantum Electronics, vol. 48, no. 1 (2012) pp. 8-16 - Y. Zhao, H. Matsumoto, T. Sato, S. Koyama, M. Takenaka and S. Takagi
Effect of Sample Thickness on SiO2/Si Interface Roughness Characterization through Transmission Electron Microscope Measurements in Strained-Si MOSFETs
J. Electrochem. Soc., vol. 159 H57 (2012) - S.-H. Kim, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
In0.53Ga0.47As Metal-oxide-semiconductor Field-effect Transistors with a self-aligned metal Source/Drain using Co-InGaAs alloy
Appl. Phys. Lett. 100, 073504 (2012) - R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka and S. Takagi
High Mobility Ge pMOSFET with 1 nm Al2O3/GeOx/Ge Gate Stack Fabricated by Plasma Post Oxidation
IEEE Trans. Electron Devices, vol. 59, no. 2, (2012) pp. 335-341 - R. Suzuki, N. Taoka, S. Lee, S. H. Kim, T.Hoshii, M. Yokoyama, T. Yasuda, W. Jevasuwan, T. Maeda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
1 nm capacitance equivalent thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor capacitance with low interface trap density and low gate leakage current density
Appl. Phys. Lett., 100, 132906 (2012) - M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano and S. Takagi
Dark current reduction of Ge photodetector by GeO2 surface passivation and gas-phase doping
Optics Exp., vol. 20, Issue 8, pp. 8718-8725 (2012) - S.-H. Kim, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
Strained In0.53Ga0.47As Metal-oxide-semiconductor Field-effect Transistors with Epitaxy-based Biaxial Strain
Appl. Phys. Lett., vol. 100, 193510 (2012) - M. Yokoyama, S.-H. Kim, R. Zhang, N. Taoka, Y. Urabe, T. Maeda, H. Takagi, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka and S. Takagi
III-V/Ge high mobility channel integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D
Appl. Phys. Exp., vol. 5, No. 7, 076501 (2012) - C.B. Zota, S.-H. Kim, M. Yokoyama, M. Takenaka and S. Takagi
Characterization of Ni-GaSb alloys formed by direct reaction of Ni and GaSb
Appl. Phys. Exp., vol. 5, 071201 (2012) - T. Hoshii, S. Lee, R. Suzuki, N. Taoka, M. Yokoyama, H. Yamada, M. Hata, T. Yasuda, M. Takenaka and S. Takagi
Improvement in Interface State Density of Al2O3/InGaAs Metal-Oxide-Semiconductor Interfaces by InGaAs Surface Nitridation
J. Appl. Phys., vol. 112, 073702 (2012) - R. Suzuki, N. Taoka, M. Yokoyama, S.-H. Kim, T. Hoshii, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
Impact of atomic layer deposition temperature on HfO2/InGaAs MOS interface properties
J. Appl. Phys., vol. 112, 084103 (2012) - Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka and S. Takagi
Low-driving-current InGaAsP Photonic-wire Optical Switches using III-V CMOS Photonics Platform
Optics Express, vol. 20, no. 26 (2012) B357-B364
[査読のある学会誌の掲載論文] [査読のある国際学会での受諾論文] [国内学会・研究会]
査読のある国際学会での受諾論文
- S. Takagi and M. Takenaka
High Mobility CMOS Technologies using III-V/Ge Channels on Si platform
13th International Conference on Ultimate Integration on Silicon (ULIS 2012), Grenoble, France, 5-7th of March, 2012 - Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka and S. Takagi
Propagation-Loss Reduction in InGaAsP Photonic-wire Waveguides by InP and Al2O3 Passivation Layers
16th European Conference on Integrated Optics and technical exhibitions (ECIO 2012), April 18-20 (2012) - R. Zhang, P. C. Huang, N. Taoka, M. Takenaka and S. Takagi
High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation
VLSI symp. (2012) p. 161-162 - S. H. Kim, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
Sub-60 nm deeply scaled Extremely-thin Body InxGa1-xAs-On-Insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS Interface Buffer Engineering
VLSI symp. (2012) p. 177-178 - C. B. Zota, S. H. Kim, Y. Asakura, M. Takenaka and S. Takagi
Self-aligned metal S/D GaSb p-MOSFETs using Ni-GaSb alloys
70th Device Research Conference (DRC), June 18-20, Pennsylvenia State University, University Park, PA, USA, P. 71-72 (2012) - M. Takenaka and S. Takagi
III-V/Ge integration on Si platform for electronic-photonic integrated circuits
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), June 27–29 (2012), Okinawa, Japan - J. H. Han, R. Zhang, T. Osada, M. Hata, M. Takenaka and S. Takagi
Improvement of SiGe MOS interfaces by plasma post-nitridation for SiGe high-k MOS optical modulators
IEEE 9th International Conference on Group IV Photonics (GFP) (2012), p. 144-146 - Y.-H. Kim, M. Takenaka and S. Takagi
Numerical analysis of strained SiGe-based carrier-injection optical modulators
IEEE 9th International Conference on Group IV Photonics (GFP) (2012), p. 126-128 - Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka and S. Takagi
Low-driving-current InGaAsP Photonic-wire Optical Switches using III-V CMOS Photonics Platform
37th European Conference and Exhibition on Optical Communication (ECOC) (2012), Tu.4.E.5 - M. Yokoyama, O. Ichikawa, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka and S. Takagi
Sulfur cleaning for (100), (111)A, and (111)B InGaAs surfaces with In content of 0.70 and their Al2O3/InGaAs MOS interface properties
24th International Conference on Indium Phosphide and Related Materials (IPRM) (2012) Tu-3E.5 - S.-H. Shin, N. Taoka, M. Takenaka and S. Takagi
Quantitative Analysis of Surface Potential Fluctuation at MOS interfaces Using Conductance Method
SSDM (2012), p. 831-832 - S.-H. Jeon, N. Taoka, H. Matsumoto, K. Nakano, S. Koyama, H. Kakibayasi, K. Araki, M. Miyashita, K. Izunome, M. Takenaka and S. Takagi
Impacts of Surface Roughness Reduction in (110) Si Substrates by High Temperature Annealing on Electron Mobility in n-MOSFETs on (110) Si
SSDM (2012), p. 813-814 - S. Takagi, S,-H, Kim, R. Zhang, M. Yokoyama, N. Taoka and M. Takenaka
III-V/Ge Channel MOS Transistor Technologies for Advanced CMOS (invited)
SSDM (2012) p. 793-794 - S. Takagi
MOS interface properties of high k/III-V gate stacks and the impact on device performance
9th International Symposium on Advanced Gate Stack Technology (2012), Saratoga Springs, NY, October 3 – 4 (2012) - R. Zhang, P.-C. Huang, M. Takenaka and S. Takagi
Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O3
Symposium on 5th International SiGe, Ge, & Related Compounds: Materials, Processing, and Devices, Symposium E of the 222nd Electrochemical Society (ECS) Meeting, Honolulu, Hawaii, USA, 07-12 October (2012) , ECS Trans., 50 (9), 699-706 (2012) - S. Takagi, R. Zhang, R. Suzuki N. Taoka, M. Yokoyama, and M. Takenaka
MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks (invited)
Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics 10, Symposium E4 of the 222nd Electrochemical Society (ECS) Meeting, Honolulu, Hawaii, USA, 07-12 October (2012), ECS Trans., 50 (4), 107-122 (2012) - J. H. Han, R. Zhang, T. Osada, M. Hata, M. Takenaka, and and and and S. Takagi
Plasma post-nitridation toward SiGe high-k MOS optical modulators
accepted in the 2nd International Symposium on Photonics and Electronics Convergence -Advanced Nanophotonics and Silicon Device Systems- (ISPEC2012), Tokyo, Japan on 3-5 December, (2012) - Y.-H. Kim, M. Takenaka, and S. Takagi
Simulation of Si/SiGe/Si double heterostructure based carrier-injection modulator
accepted in the 2nd International Symposium on Photonics and Electronics Convergence -Advanced Nanophotonics and Silicon Device Systems- (ISPEC2012), Tokyo, Japan on 3-5 December, (2012) - Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka and S. Takagi
InGaAsP Photonic-wire Mach-Zehnder Interferometer Switches Fabricated on III-V CMOS Photonics Platform
accepted in the 2nd International Symposium on Photonics and Electronics Convergence -Advanced Nanophotonics and Silicon Device Systems- (ISPEC2012), Tokyo, Japan on 3-5 December, (2012) - M. Yokoyama, Y. Asakura, H. Yokoyama, M. Takenaka, and S. Takagi
Roles of interfacial Ga and Sb oxides on GaSb MOS interface properties
43rd IEEE Semiconductor Interface Specialists Conference (SISC) (2012) 7.6. - J. H. Han, R. Zhang, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Improvement of Al2O3/Si0.75Ge0.25 MOS interface by plasma post-nitridation
43rd IEEE Semiconductor Interface Specialists Conference (SISC) (2012) 7.3. - S. Takagi
High Mobility Channel CMOS Transistors - Beyond Silicon
International Electron Devices Meeting (IEDM) (2012) tutorial, December 8, 2012 - S. Takagi, R. Zhang, S.-H Kim, N. Taoka, M. Yokoyama, J.-K. Suh, R. Suzuki, Y. Asakura, C. Zota and M. Takenaka
MOS interface and channel engineering for high-mobility Ge/III-V CMOS
International Electron Devices Meeting (IEDM) (2012) pp. 505-508 - R. Zhang, P.-C. Huang, J.-C. Lin, M. Takenaka and S. Takagi
Physical Mechanism Determining Ge p- and n-MOSFETs Mobility in High Ns Region and Mobility Improvement by Atomically Flat GeOx/Ge Interfaces
International Electron Devices Meeting (IEDM) (2012) pp. 371-374 - S. Takagi, R. Zhang, R. Suzuki, N. Taoka, M. Yokoyama and M. Takenaka
MOS interface control of high mobility channel materials for advanced CMOS applications
3rd Molecular Materials Meeting (M3), Singapore, 14 -16 January (2013) - R. Zhang, J.-C. Lin, M. Takenaka and S. Takagi
Ge Oxide Growth by Plasma Oxidation of Ge substrates through Al2O3 Layers
5th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2013), Jun. 28th –Feb. 1st, 2013, Nagoya University, Nagoya - S. Takagi
III-V channel MOSFET Technology
S3. Device Technology, SEMICON Korea (2013) - S. Takagi, R. Zhang, and M. Takenaka
High Mobility Ge MOSFETs using 0.7 nm EOT HfO2/Al2O3/GeOx/Ge Gate Stacks
6th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, "Atomically Controlled Processing for Ultralarge Scale Integration", Feb. 22- 23, 2013, Tohoku University, Sendai
[査読のある学会誌の掲載論文] [査読のある国際学会での受諾論文] [国内学会・研究会]
国内学会・研究会
- 金相賢,横山正史, 田岡紀之, 中根了昌, 安田哲二, 市川磨, 福原昇, 秦雅彦, 竹中充, 高木信一
Ni-InGaAsメタルS/D及びMOS界面バッファ層を持つ極薄膜InxGa1-xAs-OI MOSFETsの短チャネル特性
第73回応用物理学会学術講演会 松山大学/愛媛大学(2012/9/11〜14) - 金相賢, 横山正史, 田岡紀之, 中根了昌, 安田哲二, 市川磨, 福原昇, 秦雅彦, 竹中充, 高木信一
次世代高性能InxGa1-xAs-OI MOSFETの実現に向けたチャネルエンジニアリング
第73回応用物理学会学術講演会 松山大学/愛媛大学(2012/9/11〜14) - 金栄現, 竹中充, 高木信一
歪SiGeを利用したキャリア注入型光変調器のTCADシミュレーション
第73回応用物理学会学術講演会 松山大学/愛媛大学(2012/9/11〜14) - 韓在勲,張睿,長田剛規,秦雅彦,竹中充,高木信一
MOS型光変調器の実現に向けたSiGe MOS界面の改善に関する研究
第73回応用物理学会学術講演会 松山大学/愛媛大学(2012/9/11〜14) - 横山正史, 横山春喜, 竹中充, 高木信一
GaSb基板表面の自然酸化膜除去
第73回応用物理学会学術講演会 松山大学/愛媛大学(2012/9/11〜14) - Rui Zhang, J. C. Lin, P. C. Huang, N. Taoka, M. Takenaka and S. Takagi
High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks
第73回応用物理学会学術講演会 松山大学/愛媛大学(2012/9/11〜14) - 一宮佑希, 横山正史, 市川磨, 秦雅彦, 竹中充, 高木信一
InPとAl2O3 パッシベーションによるInGaAsP細線導波路の損失改善
第73回応用物理学会学術講演会 松山大学/愛媛大学(2012/9/11〜14) - 野口宗隆, 竹中充, 高木信一
薄膜ボディInGaAs–OI TFET におけるサブスレショルド特性の改善手法の検討
第73回応用物理学会学術講演会 松山大学/愛媛大学(2012/9/11〜14) - 横山正史, 朝倉佑吏, 横山春喜, 竹中充, 高木信一
GaSb MOS界面特性に与えるGaSb酸化物の影響
第60回応用物理学会春季学術講演会 神奈川工科大学(2013/3/27〜30) - R. Zhang, J. C. Lin, P. C. Huang, N. Taoka, M. Takenaka and S. Takagi
High Mobility Ge CMOS devices with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation
第60回応用物理学会春季学術講演会 神奈川工科大学(2013/3/27〜30) - R. Zhang, N. Taoka, P.-C. Huang, M. Takenaka and S. Takagi
Improvement of High Ns Mobility of Ge MOSFETs by Reducing GeOx/Ge Interface Roughness
第60回応用物理学会春季学術講演会 神奈川工科大学(2013/3/27〜30) - R. Zhang, N. Taoka, P.-C. Huang, M. Takenaka and S. Takagi
Mobility Degradation of Ge MOSFETs in High Ns Region due to Interface States inside Conduction and Valence Bands of Ge
第60回応用物理学会春季学術講演会 神奈川工科大学(2013/3/27〜30) - 忻宇飛, 金栄現, 张睿, 長田剛規, 秦雅彦, 横山正史, 竹中充, 高木信一
酸化濃縮法Ge-On-Insulator層の薄膜化がMOS界面正孔移動度に与える効果
第60回応用物理学会春季学術講演会 神奈川工科大学(2013/3/27〜30) - 金栄現, 長田剛規, 秦雅彦, 竹中充, 高木信一
歪SiGe光変調器に向けのSi/SiGe/Siコア光導波路の作製と評価
第60回応用物理学会春季学術講演会 神奈川工科大学(2013/3/27〜30) - 高木信一, 竹中充
微細MOSFETの将来動向
応用物理学会シンポジウム・半導体モデリング・シミュレーションの現状と将来展望 招待講演
第60回応用物理学会春季学術講演会 神奈川工科大学(2013/3/27〜30) - 金相賢, 横山正史, 田岡紀之, 中根了昌, 長田剛規, 市川磨, 福原昇, 秦雅彦, 竹中充, 高木信一
極薄膜InxGa1-xAs-OI MOSFETの電子移動度に与える膜厚揺らぎ散乱の影響
第60回応用物理学会春季学術講演会 神奈川工科大学(2013/3/27〜30) - 韓在勲,張睿,長田剛規,秦雅彦,竹中充,高木信一
プラズマ後窒化SiGe MOS界面の特性評価
第60回応用物理学会春季学術講演会 神奈川工科大学(2013/3/27〜30) - 一宮佑希, 横山正史, 市川磨, 秦雅彦, 竹中充, 高木信一
III-V CMOSフォトニクスを用いた低電流駆動光スイッチ
第60回応用物理学会春季学術講演会 神奈川工科大学(2013/3/27〜30) - 野口宗隆, 金相賢, 横山正史, 市川磨, 長田剛規, 秦雅彦, 竹中充, 高木信一
スピンオングラス法によるZn拡散を用いたプレーナ型InGaAs TFETの動作実証
第60回応用物理学会春季学術講演会 神奈川工科大学(2013/3/27〜30) - 張志宇,横山正史,金相賢,市川磨,長田剛規,秦雅彦,竹中充,高木信一
InGaAs MOSゲートスタック電気特性に与えるメタルゲート電極の影響
第60回応用物理学会春季学術講演会 神奈川工科大学(2013/3/27〜30)