TAKAGI & TAKENAKA Laboratory Group

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発表論文/2013

高木・竹中研究室論文リスト:Index

2013年度 | 2012年度 | 2011年度 | 2010年度 | 2009年度 | 2008年度 | 2007年以前  

[査読のある学会誌の掲載論文]  [査読のある国際学会での受諾論文] [国内学会・研究会]

2013年

査読のある学会誌の掲載論文

  1. R. Zhang, P.-C. Huang, J.-C. Lin, M. Takenaka and S. Takagi
    Atomic Layer-by-Layer Oxidation of Ge (100) and (111) Surfaces by Plasma Post Oxidation of Al2O3/Ge Structures
    Appl. Phys. Lett., vol. 102, 081603 (2013)
  2. R. Zhang, P.-C. Huang, J.-C. Lin, N. Taoka, M. Takenaka and S. Takagi
    High Mobility Ge p- and n-MOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation
    IEEE Trans. Electron Devices, vol. 60, no. 3, (2013) pp. 927-934
  3. M. Takenaka, M. Yokoyama, M. Sugiyama, Y. Nakano and S. Takagi
    InGaAsP Grating Couplers Using Complementary-Metal-Oxide-Semiconductor-Compatible III-V-On-Insulator on Si
    Appl. Phys. Exp. 6 (2013) 042501
  4. S.-H. Jeon, N. Taoka, H. Matsumoto, K. Nakano, S. Koyama, H. Kakibayasi, K. Araki, M. Miyashita, K. Izunome, M. Takenaka and S. Takagi
    Impacts of Surface Roughness Reduction in (110) Si Substrates by High Temperature Annealing on Electron Mobility in n-MOSFETs on (110) Si
    Jpn. J. Appl. Phys., 52 (2013) 04CC26
  5. J. -H. Han, R. Zhang, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Reduction in interface trap density of Al2O3/SiGe gate stack by electron cyclotron resonance plasma post-nitridation
    Appl. Phys. Express, 6 (2013) 051302
  6. C.-Y. Chang, M. Yokoyama, S.-H. Kim, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks
    Microelectronic Engineering, 109 (2013) pp. 28-30
  7. R. Zhang, J.-C. Lin, X. Yu, M. Takenaka and S. Takagi
    Impact of Plasma Post Oxidation Temperature on Interface Trap Density and Roughness at GeOx/Ge Interfaces
    Micoroelectron. Eng. 109 (2013) pp. 97-100
  8. J. -H. Han, R. Zhang, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling
    Microelectronic Engineering,109 (2013) pp. 266-269
  9. S. Takagi, R. Zhang, and M. Takenaka
    Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties
    Micoroelectron. Eng. 109 (2013) pp. 389-395
  10. S.-H. Kim, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
    Experimental Study on Electron Mobility in InxGa1-xAs-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering
    IEEE Trans. on Nanotechnology, vol. 12, no. 4 (July) p. 621-628 (2013)
  11. S.-H. Kim, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
    Sub-60 nm Extremely-thin Body InxGa1-xAs-On-Insulator MOSFETs on Si with Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and its scalability
    IEEE Trans. Electron Devices, vol. 60, no. 8, (2013) p. 2512-2517
  12. Y.-H. Kim, M. Yokoyama, N. Taoka, M. Takenaka and S. Takagi
    Ge-rich SiGe-on-Insulator for waveguide optical modulator application fabricated by Ge condensation and regrowth
    Optics Express, vol. 21, no. 17 (2013) 19615
  13. M. Yokoyama, R. Iida, Y. Ikku, S.-H. Lee, S.-H. Kim, N. Taoka, Y. Urabe, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka and S. Takagi
    Formation of III-V-On-Insulator Structures on Si by Direct Wafer Bonding
    Semicond. Sci. Technol. 28, vol. 9 (2013) 094009
  14. N. Taoka, M. Yokoyama, S. H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
    Impact of fermi level pinning due to interface traps inside conduction band on inversion-layer mobility of InxGa1-xAs metal-oxide-semiconductor field effect transistors
    IEEE Trans. on Device and Materials Reliability, vol. 13, No. 4, pp. 456-462, 2013 (invited). DOI: 10.1109/TDMR.2013.2289330
  15. S. Takagi, Rui Zhang, S.-H. Kim, M. Yokoyama, and M. Takenaka
    Performance enhancement technologies in III-V/Ge MOSFETs Ge-based and III-V technologies
    ECS Trans., vol. 58, no. 9, pp. 137-148, 2013 (invited). DOI: 10.1149/05809.0137ecst
  16. S. Takagi and M. Takenaka
    III-V/Ge MOS transistor technologies for future ULSI future IC technology and novel devices
    ECS Trans., vol. 54, no. 1, pp. 39-54, 2013 (invited). DOI: 10.1149/05401.0039ecst
  17. K. Nishi, M. Yokoyama, S.-H. Kim, H. Yokoyama, M. Takenaka and S. Takagi
    Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys
    J. Appl. Phys., vol. 115, 034515, 2014. DOI: 10.1063/1.4862486
  18. S.-H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility
    J. Appl. Phys., vol. 114, 164512, 2013. DOI: 10.1063/1.4828481
  19. N. Taoka, M. Yokoyama, S. H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
    Impact of fermi level pinning inside conduction band on electron mobility of InGaAs MOSFETs
    Appl. Phys. Lett., vol. 103, 143509, 2013. DOI: 10.1063/1.4824474
  20. K. Alam, S. Takagi, and M. Takenaka
    Analysis and comparison of L-Valley transport in GaAs, GaSb, and Ge ultrathin-body ballistic nMOSFETs
    IEEE Trans. Electron Devices, vol. 60, no. 12, pp. 4213 – 4218, 2013. DOI: 10.1109/TED.2013.2285394
  21. S.-H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    High-performance InAs-on-insulator n-MOSFETs with Ni-InGaAs S/D realized by contact resistance reduction technology
    IEEE Trans. Electron Devices, vol. 60, no. 10, pp. 3342 – 3350, 2013. DOI: 10.1109/TED.2013.2279363
  22. S. Takagi, S.-H. Kim, R. Zhang, N. Taoka, M. Yokoyama, and M. Takenaka
    Limiting factors of channel mobility in III-V/Ge MOSFETs
    ECS Trans., vol. 53, no. 3, pp. 107 - 122, 2013 (invited). DOI: 10.1149/05303.0107ecst
  23. S. Takagi, M. Yokoyama, S.-H. Kim, R. Zhang, R. Suzuki, N. Taoka, and M. Takenaka
    III-V/Ge CMOS device technologies for high performance logic applications
    ECS Trans., vol. 53, no. 3, pp. 85 - 96, 2013 (invited). DOI: 10.1149/05303.0085ecst
  24. S. Takagi, R. Zhang, R. Suzuki N. Taoka, M. Yokoyama and M. Takenaka
    MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks III-V surface passivation
    ECS Trans., vol. 50, no. 4, pp. 107-122, 2013 (invited). DOI: 10.1149/05004.0107ecst
  25. R. Zhang, P.-C. Huang, M. Takenaka and S. Takagi
    Evidence of layer-by-layer oxidation of Ge surfaces by plasma oxidation through Al2O3
    ECS Trans., vol. 50, no. 9, pp. 699-706, 2013. DOI:10.1149/05009.0699ecst
  26. S. Takagi, S. H. Kim, M. Yokoyama, R. Zhang, N. Taoka, Y. Urabe, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata, and M. Takenaka
    High mobility CMOS technologies using III-V/Ge channels on Si platform
    Solid-State Electronics, vol. 88, pp. 2-8, 2013. DOI: 10.1016/j.sse.2013.04.020
  27. S.-H. Jeon, N. Taoka, H. Matsumoto, K. Nakano, S. Koyama, H. Kakibayasi, K. Araki, M. Miyashita, K. Izunome, M. Takenaka, and S. Takagi
    Impacts of surface roughness reduction in (110) Si substrates by high temperature annealing on electron mobility in n-MOSFETs on (110) Si
    Jpn. J. Appl. Phys., Vol. 52, 04CC26, 2013. DOI: 10.7567/JJAP.52.04CC26

[査読のある学会誌の掲載論文]  [査読のある国際学会での受諾論文] [国内学会・研究会]

査読のある国際学会での受諾論文

  1. Y. Kim, M. Takenaka, T. Osada, M. Hata, S. Takagi
    Strain-induced enhancement of free-carrier effects in SiGe for optical modulator and VOA applications,
    Optical Fiber Communication Conference (OFC2014), Th1C.4, San Francisco, 13 March 2014. DOI: 10.1364/OFC.2014.Th1C.4
  2. Y. Ikku, M.Yokoyama, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Ultra-small, low-crosstalk, electrically-driven InGaAsP photonic-wire optical switches on III-V CMOS photonics platform,
    Optical Fiber Communication Conference (OFC2014), Th2A.66, San Francisco, 13 March 2014. DOI: 10.1364/OFC.2014.Th2A.66
  3. W.-L. Cai, M. Takenaka and S. Takagi
    Characterization of interface state properties of strained-Si MOS interfaces by conductance method,
    7th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-13, Tohoku University, Sendai, 28 January 2014.
  4. S.-H. Kim, M. Yokoyama, R. Nakane, M. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
    High performance sub-20-nm-channel-length extremely-thin body InAs-on-Insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability,
    International Electron Devices Meeting (IEDM’13), 16.4, Washington D. C., 10 December 2013.
  5. R. Zhang, W. Chern, X. Yu, M. Takenaka, J. L. Hoyt, S. Takagi
    High mobility strained-Ge pMOSFETs with 0.7-nm ultrathin EOT using plasma post oxidation HfO2/Al2O3/GeOx gate stacks and strain modulation,
    International Electron Devices Meeting (IEDM’13), 26.1, Washington D. C., 11 December 2013.
  6. M. Noguchi, S. Kim, M. Yokoyama, O.Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
    High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel FETs with Zn-diffused source junctions,
    International Electron Devices Meeting (IEDM’13), 28.1, Washington D. C., 11 December 2013.
  7. J.-H. Han, R. Zhang, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Impact of Ge composition on the interface trap density at Al2O3/Si1-xGex MOS interface with plasma post-nitridation,
    IEEE Semiconductor Interface Specialists conference (SISC2013), 1.3, Washington D.C., 4 December 2013.
  8. K. Nishi, M. Yokoyama, S. H. Kim, H. Yokoyama, M. Takenaka, and S. Takagi
    Impact of interfacial InAs layers on GaSb MOS interface properties,
    IEEE Semiconductor Interface Specialists conference (SISC2013), 11.11, Washington D.C., 6 December 2013.
  9. M. Yokoyama, H. Yokoyama, M. Takenaka, and S. Takagi
    Electrical properties of metal/GaSb junctions using metal-GaSb alloys,
    IEEE Semiconductor Interface Specialists conference (SISC2013), 9.4, Washington D.C., 6 December 2013.
  10. M. Takenaka and S. Takagi
    III-V/Ge device engineering for CMOS photonics,
    International Conference on Processing & Manufacturing of Advanced Materials (THERMEC2013), L3-5, Las Vegas, 3 December 2013 (invited).
  11. M. Takenaka and S. Takagi
    Heterogeneous integration for CMOS photonics,
    3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013), E-3, Tokyo, 20 November 2013 (invited).
  12. T. Kayoda, J. Han, M. Takenaka, and S. Takagi
    Feasibility study of high-performance optical modulators using semiconductor-metal transition in graphene,
    3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013), P-14, Tokyo, 19 November 2013.
  13. T. J. Kang, R. Zhang, M. Takenaka, and S. Takagi
    Surface leakage reduction for Ge metal-semiconductor-metal photodetector by GeOx passivation,
    3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013), P-18, Tokyo, 19 November 2013.
  14. Y. Ikku, M. Yokoyama, M. Noguchi, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Reduction in crosstalk of carrier-injection mach-zehnder interferometer optical switches by using III-V CMOS photonics platform,
    3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013), P-27, Tokyo, 19 November 2013.
  15. J. -H. Han, R. Zhang, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    EOT scaling of plasma post-nitrided SiGe gate stack for high performance MOS optical modulators,
    3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013), P-40, Tokyo, 19 November 2013.
  16. Y. Kim, J. Han, M. Takenaka, and S. Takagi
    Low temperature Al2O3 surface passivation for carrier injection type Si/strained SiGe/Si waveguide modulator,
    3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013), P-41, Tokyo, 19 November 2013.
  17. Y. Cheng, Y. Ikku, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Waveguide InGaAs MSM photodetector for chip-scale optical interconnects on III-V CMOS photonics platform,
    Asia Communications and Photonics Conference (ACP2013), ATh3A.4, Beijin, 14 November 2013.
  18. S. Takagi, R. Zhang, S.-H. Kim, M. Yokoyama, M. Takenaka
    Performance enhancement technologies in III-V/Ge MOSFETS,
    224th ECS Meeting, Symposium E12, 2223, San Francisco, 29 October 2013 (invited).
  19. S. Takagi, S.-H. Kim, M. Yokoyama, W.-K. Kim, R. Zhang and M. Takenaka
    Ultra-thin body MOS device technologies using high mobility channel materials
    IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (IEEE S3S’13), 9a.1, Monterey, October 7-10, 2013 (invited).
  20. S. Takagi and M. Takenaka
    High mobility CMOS technologies using III-V/Ge channels
    IEEE Nanotechnology Materials and Devices Conference (NMDC’13), MP-CK-3, Tainan, 7 October 2013 (invited).
  21. S.-H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs,
    43rd European Solid-State Device Research Conference (ESSDERC’13), B4L-A1, Bucharest, 18 September 2013.
  22. Y. Ikku, M. Yokoyama, N. Noguchi, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Low-crosstalk 2 ´ 2 InGaAsP photonic-wire optical switches using III-V CMOS photonics platform,
    European Conference on Optical Communication (ECOC’13), London, P.2.19, 24 September 2013.
  23. M. Yokoyama, H. Yokoyama, M. Takenaka, and S. Takagi
    GaSb-on-insulator metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding technology
    International Conference on Solid State Devices and Materials (SSDM2013), PS-6-33, Fukuoka, 26 September 2013 (Late News).
  24. M. Kim, Y. Wakabayashi, R. Nakane, M. Yokoyama, M. Takenaka and S. Takagi
    Electrical characteristics of Ge/Si hetero-junction tunnel field-effect transistors and their post annealing effects
    International Conference on Solid State Devices and Materials (SSDM2013), B-6-2, Fukuoka, 27 September 2013.
  25. W. K. Kim, Y. Kin, Y. H. Kim, S.H. Kim, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Sb-diffused source/drain ultra-thin body Ge-on insulator nMOSFETs fabricated by Ge condensation
    International Conference on Solid State Devices and Materials (SSDM2013), D-6-5L, Fukuoka, 27 September 2013 (Late News).
  26. Y. Kim, J. Han, M. Takenaka and S. Takagi
    Low temperature surface passivation for carrier injection type SiGe optical modulator,
    International Conference on Group IV Photonics (GFP2013), ThD4, Seoul, 29 August 2013.
  27. T. Kayoda, J. Han, M. Takenaka and S. Takagi
    Evaluation of Chemical potential for graphene optical modulators based on the semiconductor-metal transition,
    International Conference on Group IV Photonics (GFP2013), ThD5, Seoul, 29 August 2013.
  28. J. Kang, R. Zhang, M. Takenaka and S. Takagi
    Dark current suppression for germanium metal-semiconductor-metal photodetector by plasma post-oxidation passivation,
    International Conference on Group IV Photonics (GFP2013), FA6, Seoul, 30 August 2013.
  29. Shinichi Takagi and Mitsuru Takenaka
    III-V/Ge MOS transistor technologies for future ULSI,
    International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT 4’13), c, 11 July 2013 (invited).
  30. Shinichi Takagi, Rui Zhang, and Mitsuru Takenaka
    Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties,
    18th Conference on Insulating Films on Semiconductors (INFOS’13), Cracow, 26 June 2013 (Plenary).
  31. R. Zhang, Ju-Chin Lin, X. Yu, M. Takenaka, and S. Takagi
    Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces,
    18th Conference on Insulating Films on Semiconductors (INFOS’13), Cracow, 26 June 2013.
  32. J. -H. Han, R. Zhang, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling,
    18th Conference on Insulating Films on Semiconductors (INFOS’13), Cracow, 27 June 2013.
  33. C.-Y. Chang, M. Yokoyama, S.-H. Kim, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks,
    18th Conference on Insulating Films on Semiconductors (INFOS’13), Cracow, 27 June 2013.
  34. R. Zhang, J-C. Lin, X. Yu, M. Takenaka, and S. Takagi
    Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing,
    VLSI Symposium., 3.1, Kyoto, 11 June 2013.
  35. S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Strained extremely-thin body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates,
    VLSI Symposium, 5.1, Kyoto, 11 June 2013.
  36. S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    High performance extremely-thin body InAs-On-Insulator MOSFETs on Si with Ni-InGaAs metal S/D by contact resistance reduction technology,
    VLSI Symposium, 5.2, Kyoto, 11 June 2013.
  37. W.-L. Cai, M. Takenaka, and S. Takagi
    Evaluation of interface state density of strained-Si MOS interfaces by conductance method,
    Silicon Nanoelectronics Workshop (SNW2013), 3-4, Kyoto, 9 June 2013.
  38. S. Takagi, R. Zhang, and M. Takenaka
    High quality Ge gate stacks technologies by using plasma oxidation,
    ICSI-8/ISCSI-VI, C1-3, Fukuoka, 6 June 2013.
  39. Y. H. Kim, T. Osada, M. Hata, M. Takenaka, S. Takagi
    Evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator,
    8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), pp. 213-214, Fukuoka, 3 June 2013.
  40. M. Kim, Y. H. Kim, M. Yokoyama, R. Nakane, S. H. Kim, M. Takenaka and S. Takagi
    Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications,
    8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), pp. 197-198, Fukuoka, 3 June 2013.
  41. N. Yoshida, E. Waki, M. Arai, K. Yamazaki, M. Takenaka, and S. Takagi
    Extraction of interface state density at SiO2/SiC interfaces based on impedance measurements with different temperatures,
    6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), pp. 307-308, Fukuoka, 4 June 2013.
  42. J.-C. Lin, R. Zhang, N. Taoka, M. Takenaka, and S. Takagi
    Characterization of interface properties of Au/Al2O3/GeOx/Ge MOS Structures,
    6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), pp. 115-116, Fukuoka, 6 June 2013.
  43. K. Alam, S. Takagi, and M. Takenaka
    Thickness dependent performance of (111) GaAs UTB nMOSFETs,
    16th International Workshop on Computational Electronics (IWCE’13), pp. 136 - 137, Nara, 4 June 2013.
  44. S. Takagi, M. Yokoyama, S.-H. Kim, R. Zhang, R. Suzuki, N. Taoka, and M. Takenaka
    III-V/Ge CMOS device technologies for high performance logic applications,
    223rd ECS Meeting, Symposium E5, 856, Toronto, May 2013 (invited).
  45. S. Takagi, S.-H. Kim, R. Zhang, N. Taoka, M. Yokoyama, and M. Takenaka
    Limiting factors of channel mobility in III-V/Ge MOSFETs,
    223rd ECS Meeting, Symposium E5, 858, Toronto, 13 May 2013 (invited).
  46. S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi
    Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs,
    Indium Phosphide and Related Materials (IPRM2013), WeD1-3, Kobe, 22 May 2013.
  47. M. Yokoyama, Y. Asakuar, H. Yokoyama, M. Takenaka, and S. Takagi
    Impact of Al2O3 ALD temperature on Al2O3/GaSb metal-oxide-semiconductor interface properties,
    Indium Phosphide and Related Materials (IPRM2013), WeD1-4, Kobe, 22 May 2013.
  48. M. Takenaka, R. Zhang, S. Takagi
    MOS interface engineering for high-mobility Ge CMOS,
    IEEE International Reliability Physcis Symposium (IRPS’13), 4C.1, Monterey, 17 April 2013 (invited).
  49. S. Takagi, R. Zhang, N. Taoka1, R. Suzuki, S.-H. Kim, M. Yokoyama, and M. Takenaka
    MOS interface control in III-V/Ge gate stacks and the impact on MOSFET performance,
    MRS Spring Meeting, CC1.04, San Francisco, 2 April 2013 (invited).

[査読のある学会誌の掲載論文]  [査読のある国際学会での受諾論文] [国内学会・研究会]

国内学会・研究会

  1. 金栄現, 長田剛規, 秦雅彦, 竹中充, 高木信一
    歪SiGe 光変調器における歪誘起自由キャリア効果の増大
    第61回応用物理学会春季学術講演会,19a-F8-9,青山学院大学相模原キャンパス,2014年3月19日.
  2. 一宮佑希, 横山正史, 野口宗隆, 市川磨, 長田剛規, 秦雅彦, 竹中充, 高木信一
    InGaAsP細線導波路光スイッチにおける低クロストーク動作
    第61回応用物理学会春季学術講演会,17p-PA2-8,青山学院大学相模原キャンパス,2014年3月17日.
  3. 程勇鵬, 一宮佑希, 市川磨, 長田剛規, 秦雅彦, 竹中充, 高木信一
    III-V CMOSフォトニクス•プラットフォーム上導波路型InGaAs MSMフォトディテクタの作製
    第61回応用物理学会春季学術講演会,17p-PA2-9,青山学院大学相模原キャンパス,2014年3月17日.
  4. 倉持美沙,竹中充,一宮佑希,高木信一
    量子井戸インターミキシグを用いた III-V CMOSフォトニクス用マルチバンドギャップ貼り合せ基板の作製
    第61回応用物理学会春季学術講演会,20a-F8-10,青山学院大学相模原キャンパス,2014年3月20日.
  5. 韓在勲,張睿,長田剛規,秦雅彦,竹中充,高木信一
    プラズマ後窒化によるAl2O3/SiGe MOS界面改善のGe組成依存性
    第61回応用物理学会春季学術講演会,?????,青山学院大学相模原キャンパス,2014年3月17-20日.
  6. 金佑彊, 金栄現, 金相賢, 長田剛規, 秦雅彦, 竹中充, 高木信一
    Sb拡散ソース・ドレインを有する酸化濃縮基板上反転型極薄膜Ge-on-Insulator nMOSFET
    第61回応用物理学会春季学術講演会,18p-PA12-5,青山学院大学相模原キャンパス,2014年3月18日.
  7. 朝倉佑吏, 韓在勲, 荒木浩司, 宮下守也, 泉妻宏治, 竹中充, 高木信一
    高温Ar熱処理Si基板上 (100) pMOSFETの正孔移動度向上機構
    第61回応用物理学会春季学術講演会,18p-PA12-2,青山学院大学相模原キャンパス,2014年3月18日.
  8. 西康一, 金相賢, 横山正史, 横山春喜, 竹中充, 高木信一
    金属GaSb合金を用いた金属/GaSb接合の電気特性
    第61回応用物理学会春季学術講演会,19p-F12-19,青山学院大学相模原キャンパス,2014年3月19日.
  9. 田中克久,張睿,竹中充,高木信一
    容量値の時間応答を利用したGe MOS界面における遅い準位の定量的評価
    第61回応用物理学会春季学術講演会,18p-D8-7,青山学院大学相模原キャンパス,2014年3月18日.
  10. 横山正史, 西康一, 横山春喜, 竹中充, 高木信一
    基板貼り合わせ法によるGaSb-OI on Si基板の作製とGaSb-OI p-MOSFETの動作実証
    第61回応用物理学会春季学術講演会,19p-F12-20,青山学院大学相模原キャンパス,2014年3月17-20日.
  11. 張睿,Winston Chern,玉虓,竹中充,Hoyt Judy,高木信一
    High mobility strained-Ge pMOSFETs with 0.7-nm ultrathin EOT using plasma post oxidation HfO2/Al2O3/GeOx Gate Stacks
    第61回応用物理学会春季学術講演会,19p-F12-15,青山学院大学相模原キャンパス,2014年3月19日.
  12. 金ミンス,若林勇希,中根了昌,横山正史,竹中充,高木信一
    Type-II staggered hetero-junction tunnel FETs with Ge sources and biaxial tensile strain Si channels
    第61回応用物理学会春季学術講演会,19p-PG4-4,青山学院大学相模原キャンパス,2014年3月19日.
  13. W.-L. Cai, M. Takenaka, and S. Takagi
    Effects of biaxially-tensile strain on properties of Si/SiO2 interface states generated by electrical stress
    第61回応用物理学会春季学術講演会,18a-D8-6,青山学院大学相模原キャンパス,2014年3月18日.
  14. X. Yu, R. Zhang, J. Kang, T. Maeda, T. Itatani, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates
    第61回応用物理学会春季学術講演会,19p-F12-14,青山学院大学相模原キャンパス,2014年3月17-20日.
  15. 竹中充
    異種半導体集積CMOSおよびフォトニクス融合への展望
    光産業技術振興協会第4回フォトニックデバイス・応用技術研究会,上智大学,2014年1月23日(招待講演).
  16. 金相賢,横山正史,中根了昌,市川磨,長田剛規,秦雅彦,竹中充,高木信一
    強い短チャネル効果耐性と閾値変調性を持つ極薄膜InAs-on-Insulator Tri-Gate MOSFET
    応用物理学会シリコンテクノロジー分科会第 167 回研究集会/電子情報通信学会シリコン材料・デバイス研究会 1 月研究会,機械振興会館,2014年1月29日(招待講演).
  17. 竹中充、高木信一
    異種半導体集積を用いたCMOSフォトニクス
    レーザー学会第34回年次大会,21aI.5, 北九州国際会議場,小倉, 2014年1月21日(招待講演).
  18. 金栄現、韓在勲、竹中充、高木信一
    Si /歪SiGe/Si導波路コア・キャリア注入型光変調器に向けた低温表面パシベーション
    電子情報通信学会第20回シリコンフォトニクス研究会,P18, 東京工業大学大岡山キャンパス, 2013年10月18日.
  19. 韓在勲、張睿、長田剛規、秦雅彦、竹中充、高木信一
    MOS光変調器の高性能化に向けたプラズマ後窒化SiGeゲートスタックのEOTスケーリング
    電子情報通信学会第20回シリコンフォトニクス研究会,P14, 東京工業大学大岡山キャンパス, 2013年10月18日.
  20. 嘉陽田達矢、韓在勲、竹中充、高木信一
    半導体-金属遷移を利用したグラフェン光変調器の実現に向けたグラフェン中化学ポテンシャルの評価
    電子情報通信学会第20回シリコンフォトニクス研究会,P17, 東京工業大学大岡山キャンパス, 2013年10月18日.
  21. 亢健, 張睿、竹中充、高木信一
    GeOxパッシベーションによるGe MSM受光器の暗電流削減
    電子情報通信学会第20回シリコンフォトニクス研究会,P15, 東京工業大学大岡山キャンパス, 2013年10月18日.
  22. 蔡 偉立,竹中 充,高木信一
    Evaluation of Interface State Density of Strained-Si MOS Interfaces by Conductance Method
    第74回応用物理学会秋季学術講演会,17a-B5-6,同志社大学京田辺キャンパス,2013年9月17日.
  23. 嘉陽田達矢,韓 在勲,竹中 充,高木信一
    半導体-金属遷移を利用したグラフェン光変調器の検討
    第74回応用物理学会秋季学術講演会,19a-P2-18,同志社大学京田辺キャンパス,2013年9月19日.
  24. 横山正史,横山春喜,竹中 充,高木信一
    InAs層の導入によるAl2O3/GaSb MOS界面特性の改善
    第74回応用物理学会秋季学術講演会,17a-B5-9,同志社大学京田辺キャンパス,2013年9月17日.
  25. 金 栄現,韓 在勲,竹中 充,高木信一
    歪SiGeキャリア注入型光変調器に向けた低温パシベーション
    第74回応用物理学会秋季学術講演会,19a-P2-22,同志社大学京田辺キャンパス,2013年9月19日.
  26. 林汝靜,張睿,田岡紀之,竹中 充,高木信一
    Characterization of Interface Traps in Au/Al2O3/GeOx/Ge MOS Structures
    第74回応用物理学会秋季学術講演会,18p-P9-1,同志社大学京田辺キャンパス,2013年9月18日.
  27. 張睿,林汝静,玉虓,竹中 充,高木信一
    Suppression of Surface States inside Conduction Band and Effective Mobility Improvement of Ge nMOSFETs by Atomic Deuterium Annealing
    第74回応用物理学会秋季学術講演会,17p-B5-20,同志社大学京田辺キャンパス,2013年9月17日.
  28. 西 康一,金 相賢,横山正史,横山春喜,竹中 充,高木信一
    GaSb pMOSFETのMetal Source/Drainに向けたNi-GaSb/GaSbショットキー接合の低温における形成
    第74回応用物理学会秋季学術講演会,19p-C8-12,同志社大学京田辺キャンパス,2013年9月19日.
  29. キム ミンス,若林勇希,中根了昌,横山正史,竹中 充,高木信一
    Electrical Characteristics of Ge/Si Hetero-Junction Tunnel Field-Effect Transistors and their Post Annealing Effects
    第74回応用物理学会秋季学術講演会,19a-P5-12,同志社大学京田辺キャンパス,2013年9月19日.
  30. 韓 在勲,張睿,長田剛規,畑 雅彦,竹中 充,高木信一
    プラズマ後窒化によるHfO2/Al2O3/SiGeゲートスタックのEOTスケーリングに関する検討
    第74回応用物理学会秋季学術講演会,17p-B5-8,同志社大学京田辺キャンパス,2013年9月17日.
  31. 一宮佑希,野口宗隆,横山正史,市川 磨,長田剛規,秦 雅彦,竹中 充,高木信一
    InGaAsP細線導波路光スイッチに向けたZn拡散によるp+InGaAsPの形成
    第74回応用物理学会秋季学術講演会,19a-P2-15,同志社大学京田辺キャンパス,2013年9月19日.
  32. 金 佑彊,忻 宇飛,金 栄現,金 相賢,長田剛規,秦 雅彦,竹中 充,高木信一
    酸化濃縮基板へのSb ドーピングにより作製した極薄膜Ge-on-Insulator nMOSFETs
    第74回応用物理学会秋季学術講演会,18p-P10-2,同志社大学京田辺キャンパス,2013年9月18日.
  33. 竹中 充,高木信一
    III-V/Ge CMOSフォトニクス実現に向けたデバイス技術
    電気化学会電子材料委員会第77回半導体・集積回路技術シンポジウム,東京工業大学,2013年7月11日(招待講演)

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