TAKAGI & TAKENAKA Laboratory Group

Japanese / English


Publications/2014

Paper list of Takagi and Takenaka Group : index

2014  |  2013  |  2012  |  2011  |  2010  |  2009  |  2008  |  Before 2007

[Journal Paper]  [International conference Paper] [Domestic conference Paper & others]

2014

Journal Paper

  1. M. Yokoyama, H. Yokoyama, M. Takenaka, and S. Takagi
    Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties
    Appl. Phys. Lett., vol. 106, 122902, 2015. DOI: 10.1063/1.4914453
  2. M. Yokoyama, H. Yokoyama, M. Takenaka, and S. Takagi
    Ultrathin body GaSb-on-insulator p-channel met-al-oxide-semiconductor field-effect transistors on Si fabri-cated by direct wafer bonding
    Appl. Phys. Lett., vol. 106, 073503, 2015. DOI: 10.1063/1.4906922
  3. M. Kim, Y. Ki. Wakabayashi, M. Yokoyama, R. Nakane, M. Takenaka, and Shinichi Takagi
    Ge/Si heterojunction tunnel field-effect transistors and their post metallization annealing effect
    IEEE Trans. Electron Devices, vol. 62, no. 1, pp. 9 – 15, 2015. DOI: 10.1109/TED.2014.2371038
  4. K. Nishi, M. Yokoyama, H. Yokoyama, T. Oshi, H. Sugiyama, M. Takenaka, and S. Takagi
    Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces
    Appl. Phys. Lett., vol. 105, 233503, 2014. DOI: 10.1063/1.4903837
  5. K. Tanaka, R. Zhang, M. Takenaka, and S. Takagi
    Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance
    Jpn. J. Appl. Phys., Vol. 54, 04DA02, 2015. DOI: 10.7567/JJAP.54.04DA02
  6. W. Kim, M. Takenaka, and S. Takagi
    Properties of ultrathin-body condensation Ge-on-insulator films thinned by additional thermal oxidation
    Jpn. J. Appl. Phys., Vol. 54, 04DA05, 2015. DOI: 10.7567/JJAP.54.04DA05
  7. W. Cai, M. Takenaka, and S. Takagi
    Improvement of S-factor method for evaluation of MOS interface state density,
    Jpn. J. Appl. Phys., Vol. 54, 04DC07, 2015. DOI: 10.7567/JJAP.54.04DC07
  8. X. Yu, R. Zhang, J. Kang, T. Maeda, T. Itatani, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Ultrathin body germanium-on-insulator (GeOI) pseudo-MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates,
    ECS Solid State Letters, vol. 4, no. 2, pp. P15-P18, 2015. DOI: 10.1149/2.0031502ssl
  9. S. Takagi, S.-H. Kim, M. Yokoyama, K. Nishi, R. Zhang, and M. Takenaka
    Material challenges and opportunities in Ge/III-V channel MOSFETs,
    ECS Trans., vol. 64, no. 11, pp. 99-110, 2014 (invited). DOI: 10.1149/06411.0099ecst
  10. R. Zhang, X. Yu, M. Takenaka, and Shinichi Takagi
    Impact of channel orientation on electrical properties of Ge p- and n-MOSFETs with 1-nm EOT Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation
    IEEE Trans. Electron Devices, vol. 61, no. 11, pp. 3668 – 3675, 2014. DOI: 10.1109/TED.2014.2359678
  11. K. Alam, S. Takagi, and M. Takenaka
    A Ge ultrathin-body n-channel tunnel FET: Effects of surface orientation
    IEEE Trans. Electron Devices, vol. 61, no. 11, pp. 3594 – 3600, 2014. DOI: 10.1109/TED.2014.2353513
  12. K. Nishi, M. Yokoyama, S.-H. Kim, H. Yokoyama, M. Takenaka and S. Takagi
    Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys
    J. Appl. Phys., vol. 115, 034515, 2014. DOI: 10.1063/1.4862486
  13. W. Kim, K. Kuroda, M. Takenaka, and S. Takagi
    Sb-doped S/D ultra-thin body Ge-on insulator nMOSFET fabricated by improved Ge condensation process
    IEEE Trans. Electron Devices, vol. 61, no. 10, pp. 3379 – 3385, 2014. DOI: 10.1109/TED.2014.2350457
  14. Y. Cheng, Y. Ikku, M. Takenaka, and S. Takagi
    InGaAs MSM photodetector monolithically integrated with InP photonic-wire waveguide on III-V CMOS photonics platform
    IEICE Electronics Express, vol. 11, no. 16, pp. 20140609, 2014. DOI: 10.1587/elex.11.20140609
  15. S.H. Kim., Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y.-C. Kao, M. Takenaka, and S. Takagi
    Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors
    Appl. Phys. Lett., vol. 105, 043504, 2014. DOI: 10.1063/1.4891493
  16. R. Zhang, X. Yu, M. Takenaka, and Shinichi Takagi
    Physical origins of high normal field mobility degradation in Ge p- and n-MOSFETs with GeOx/Ge MOS interfaces fabricated by plasma post oxidation
    IEEE Trans. Electron Devices, vol. 61, no. 7, pp. 2316 – 2323, 2014. DOI: 10.1109/TED.2014.2325604
  17. S.H. Kim., M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors
    Appl. Phys. Lett., vol. 104, 263507, 2014. DOI: 10.1063/1.4885765
  18. M. Yokoyama, Y. Asakura, H. Yokoyama, M. Takenaka, and S. Takagi
    Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process
    Appl. Phys. Lett., vol. 104, 262901, 2014. DOI: 10.1063/1.4884950
  19. K. Alam, S. Takagi, and M. Takenaka
    Strain-modulated L-valley ballistic-transport in (111) GaAs ultrathin-body nMOSFETs
    IEEE Trans. Electron Devices, vol. 61, no. 5, pp. 1335 – 1340, 2014. DOI: 10.1109/TED.2014.2311840
  20. S.-H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and Shinichi Takagi
    High performance tri-gate extremely thin-body InAs-on-insulator MOSFETs with high short channel effect immunity and Vth tunability,
    IEEE Trans. Electron Devices, vol. 61, no. 5, pp. 1354 – 1360, 2014. DOI: 10.1109/TED.2014.2312546
  21. Y. Kim, M. Takenaka, T. Osada, M. Hata, and S. Takagi,
    Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator
    Thin Solid Films, Vol. 557, pp. 342-345, 2014. DOI: 10.1016/j.tsf.2013.10.063
  22. N. Yoshida, E. Waki, M. Arai, K. Yamasaki, M. Takenaka, and Shinichi Takagi,
    Extraction of Interface State Density at SiO2/SiC Interfaces based on Impedance Measurements with Different Temperatures
    Thin Solid Films, Vol. 557, pp. 237-240, 2014. DOI: /10.1016/j.tsf.2013.10.062
  23. M. Kim, Y. Kim, M. Yokoyama, R. Nakane, S.-H. Kim, M. Takenaka, and S. Takagi,
    Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications
    Thin Solid Films, Vol. 557, pp. 298-301, 2014. DOI: 10.1016/j.tsf.2013.10.067
  24. Y. Kim, M. Takenaka, T. Osada, M. Hata, and S. Takagi
    Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators
    Scientific Reports, vol. 4, 4683, 2014. DOI: 10.1038/srep04683
  25. Y. Kim, J. Han, M. Takenaka, and S. Takagi
    Low temperature Al2O3 surface passivation for carrier-injection SiGe optical modulator
    Optics Express Letters, vol. 22. no. 7, pp. 7458-7464, 2014. DOI: 10.1364/OE.22.007458
  26. S. H. Kim, M. Yokoyama, Y. Ikku, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation
    Appl. Phys. Lett., vol. 104, 113509, 2014. DOI: 10.1063/1.4869221
  27. W. Cai, M. Takenaka, and S. Takagi
    Evaluation of interface state density of strained-Si metal-oxide-semiconductor interfaces by conductance method
    J. Appl. Phys., vol. 115, 094509, 2014. DOI: 10.1063/1.4867935
  28. M. Yokoyama, K. Nishi, S.-H. Kim, H. Yokoyama, M. Takenaka, and S. Takagi
    Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors
    Appl. Phys. Lett., vol. 104, 093509, 2014. DOI: 10.1063/1.4867262

[Journal Paper]  [International conference Paper] [Domestic conference Paper & others]

International conference Paper

  1. Y. Kim, J. Fujikata, S. Takahashi, M. Takenaka, and S. Takagi
    SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect in strained SiGe
    Optical Fiber Communication Conference (OFC2015), Tu2A.7, Los Angelas, 24 March 2015.
  2. X. Yu, J. Kang, R. Zhang, M. Takenaka, and S. Takagi
    Mobility improvement of ultrathin-body germanium-on-insulator (GeOI) MOSFETs on flipped smart-cut GeOI substrates
    Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), D4, Bologna, Italy, 28 January 2015. DOI: 10.1109/ULIS.2015.7063798
  3. M. Kim, Y. Wakabayashi, R. Nakane, M. Yokoyama, M. Takenaka and S. Takagi
    High Ion/Ioff Ge-source ultrathin body strained-SOI tunnel FETs – Impact of channel strain, MOS interfaces and back gate on the electrical properties
    International Electron Devices Meeting (IEDM’14), 13.2, San Francisco, 16 December 2014. DOI: 10.1109/IEDM.2014.7047043
  4. J.-H. Han, M. Takenaka, and S. Takagi
    Comparison of Al2O3/Si1-xGex MOS interfaces grown on p-Si (100) and p-Si (110) with plasma post-nitridation
    IEEE Semiconductor Interface Specialists conference (SISC2014), 13.4, San Diego, USA, 13 December 2014.
  5. C.-Y. Chang, M. Takenaka, and S. Takagi
    Improvement of electrical properties of InGaAs MOS interfaces by inserting La oxide interfacial layers into InGaAs high-k gate stacks
    IEEE Semiconductor Interface Specialists conference (SISC2014), 4.5, San Diego, USA, 11 December 2014.
  6. M. Takenaka
    Strained SiGe technology for high-performance optical modulators and attenuators
    4th International Symposium on Photonics and Electronics Convergence (ISPEC2014), B-6, Tokyo, 17 November 2014.
  7. Y. Cheng, Y. Ikku, M. Takenaka, and S. Takagi
    InGaAs MSM photodetector with InAlAs and InP cap layers on III-V CMOS photonics platform for low dark current operation
    4th International Symposium on Photonics and Electronics Convergence (ISPEC2014), P20, Tokyo, 18 November 2014.
  8. Y. Ikku, M. Yokoyama, M. Takenaka, and S. Takagi
    Low-crosstalk carrier-injection Mach-Zehnder interferometer optical switches with 50-μm-long phase shifters on III-V CMOS photonics platform
    4th International Symposium on Photonics and Electronics Convergence (ISPEC2014), P19, Tokyo, 18 November 2014.
  9. Y. Kim, J. Fujikata, S. Takahashi, M. Takenaka, and S. Takagi
    Low injection-current variable optical attenuator by using strained SiGe with optimized lateral PIN junction
    4th International Symposium on Photonics and Electronics Convergence (ISPEC2014), P54, Tokyo, 18 November 2014.
  10. T. Kayoda, M. Takenaka, and S. Takagi
    Examination of modulation efficiency of graphene optical modulator based on semiconductor-metal transition
    4th International Symposium on Photonics and Electronics Convergence (ISPEC2014), P33, Tokyo, 18 November 2014.
  11. J. Kang, X. Yu, M. Takenaka, and S. Takagi
    Ge-on-Insulator Substrate Fabrication for Ge CMOS Photonics Platform
    4th International Symposium on Photonics and Electronics Convergence (ISPEC2014), P39, Tokyo, 18 November 2014.
  12. S. Takagi and M. Takenaka
    Material challenges and opportunities in Ge/III-V channel MOSFETS
    226th ECS Meeting, Symposium P3, 1645, Cancun, Mexico, 7 October 2014 (invited).
  13. Y. Kim, J. Fujikata, S. Takahashi, M. Takenaka, and S. Takagi
    Record-low injection-current strained SiGe variable optical attenuator with optimized lateral PIN junction
    European Conference on Optical Communication (ECOC’14), Cannes, P.2.6, 24 September 2014. DOI: 10.1109/ECOC.2014.6963927
  14. K. Tanaka, R. Zhang, M. Takenaka, and S. Takagi
    Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance
    International Conference on Solid State Devices and Materials (SSDM2014), F-2-2, Tukuba, 9 September 2014.
  15. W.K. Kim, M. Takenka, and S. Takagi
    Properties of ultrathin body condensation GOI films thinned by additional thermal oxidation
    International Conference on Solid State Devices and Materials (SSDM2014), PS-1-15, Tukuba, 10 September 2014 (Late News).
  16. W.-L. Cai, M. Takenka, and S. Takagi
    Improvement of S-factor Method for Evaluation of MOS Interface State Density
    International Conference on Solid State Devices and Materials (SSDM2014), J-2-2, Tukuba, 9 September 2014.
  17. S. Takagi and M. Takenaka
    III-V CMOS device technologies on Si platform
    E-MRS Fall Meeting, Symposium J, 71, Warsaw, Poland, 16 September 2014 (invited).
  18. Y. Ikku, and M. Takenaka, and S. Takagi
    Low-resistance lateral junction formation for laser diodes on III-V CMOS photonics platform
    24th IEEE International Semiconductor Laser Conference (ISLC 2014), MB3, Palma de Mallorca, Spain, 8 September 2014. 10.1109/ISLC.2014.150
  19. Y. Kim, M. Takenaka and S. Takagi
    Simulation of carrier-depletion strained SiGe optical modulators with vertical p-n junction
    International Conference on Group IV Photonics (GFP2014), ThP5, Paris, France, 28 August 2014. DOI: 10.1109/Group4.2014.6961993
  20. S. Takagi and M. Takenaka
    Challenges & advances of MOSFETs using high mobility material channels
    International Conference on the Physics of Semiconductors (ICPS2014), Austin, USA, 12 August 2014 (invited).
  21. M. Takenaka, Y. Ikku, and S. Takagi
    III-V CMOS photonics platform for low-power and low-crosstalk photonic-wire switches and modulators
    Advanced Photonics for Communications, JT5C.4, San Dieog, USA, 15 July 2014 (invited).
  22. M. Yokoyama, H. Yokoyama, M. Takenaka and S. Takagi
    III-V single structure CMOS by using ultrathin body InAs/GaSb-OI channels on Si
    VLSI Symposium, 4.2, Hawaii, USA, 10 June 2014. DOI: 10.1109/VLSIT.2014.6894350
  23. S. H. Kim, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y.-C. Kao, M. Takenaka and S. Takagi
    High performance InGaAs-On-Insulator MOSFETs on Si by novel direct wafer bonding technology applicable to large wafer size Si
    VLSI Symposium, 4.4, Hawaii, USA, 10 June 2014. DOI: 10.1109/VLSIT.2014.6894352
  24. S. Takagi and M. Takenaka
    III-V/Ge CMOS device technologies for future logic LSIs
    International SiGe Technology and Device Meeting (ISTDM2014), 1.1, Singapore, 2 June 2014 (plenary). DOI: 10.1109/ISTDM.2014.6874696
  25. Y. Ikku, M. Takenaka, and S. Takagi
    Surface orientation depdendence of electro-optic effects in InGaAsP for lateral pin-junction InGaAsP photonic-wire modulators
    Indium Phosphide and Related Materials (IPRM’14), P27, Montpellier, 11-15 May 2014. DOI: 10.1109/ICIPRM.2014.6880549
  26. Y. Cheng, Y. Ikku, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Waveguide InGaAs photodetector with Schottky barrier enhancement layer on III-V CMOS photonics platform
    Indium Phosphide and Related Materials (IPRM’14), We-B1-2, Montpellier, 11-15 May 2014. DOI: 10.1109/ICIPRM.2014.6880578
  27. M. Kuramochi, M. Takenaka, Y. Ikku, and S. Takagi
    Multi-bandgap III-V on insulator wafer fabricated by quantum well intermixing for III-V CMOS photonics platform
    Indium Phosphide and Related Materials (IPRM’14), Mo-B1-3, Montpellier, 11-15 May 2014. DOI: 10.1109/ICIPRM.2014.6880518
  28. K. Nishi, M. Yokoyama, H. Yokoyama, M. Takenaka, and S. Takagi
    Thin body GaSb-OI p-MOSFETs on Si wafers fabricated by direct wafer bonding
    Indium Phosphide and Related Materials (IPRM’14), Th-D2-6, Montpellier, 11-15 May 2014. DOI: 10.1109/ICIPRM.2014.6880566
  29. M. Kim, Y. Wakabayashi, R. Nakane, M. Yokoyama, M. Takenaka, and S. Takagi
    Effect of in-situ boron doping in germanium source regions on performance of germanium/strained-silicon-on-insulator tunnel field-effect transistors
    MRS Spring Meeting, BB2.01, San Francisco, 22 April 2014.
  30. X. Yu, R. Zhang, J. Kang, T. Osada, M. Hata, M. Takenaka, and S. Takagi
    Ultrathin body Germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III-V substrates
    International Symposium on VLSI technology, System and Applications (VLSI-TSA2014), TR22, Hsinchu, Taiwan, 28 April 2014. DOI: 10.1109/VLSI-TSA.2014.6839657
  31. W.-L. Cai, M. Takenaka and S. Takagi
    Effects of biaxially-tensile strain to properties of Si/SiO2 interface states generated by electrical stress
    IEEE International Reliability Physcis Symposium (IRPS’14), XT-5, Waikoloa, Hawaii, USA, 1-5 April 2014. DOI: 10.1109/IRPS.2014.6861183

[Journal Paper]  [International conference Paper] [Domestic conference Paper & others]

Domestic conference Paper & others

  1. 韓 在勲、竹中 充、高木 信一
    プラズマ後窒化(100)面及び(110)面SiGe MOS界面の比較
    第62回応用物理学会春季学術講演会,14a-A24-4,東海大学湘南キャンパス,2015年3月14日.
  2. Weili Cai, Mitsuru Takenaka, Shinichi Takagi
    GaSb基板の熱処理条件最適化
    第62回応用物理学会春季学術講演会,13p-D4-10,東海大学湘南キャンパス,2015年3月13日.
  3. 金 相賢、一宮 佑希、横山 正史、中根 了昌、Li Jian、Kao Yung-Chung、竹中 充、高木 信一
    大口径化可能な貼り合わせ法によるSi上高性能InGaAs-OI MOSFETの作製
    第62回応用物理学会春季学術講演会,13a-A23-8,東海大学湘南キャンパス,2015年3月13日(第6回シリコンテクノロジー分科会論文賞受賞記念講演).
  4. Jian Kang, Xiao Yu, Mitsuru Takenaka, Shinichi Takagi
    Study of Thermal Annealing Effect on Smartcut Ge-on-Insulator Substrate
    第62回応用物理学会春季学術講演会,12p-A16-6,東海大学湘南キャンパス,2015年3月12日.
  5. ChihYu Chang, Osamu Ichikawa, Takenori Osada, Hisashi Yamada, Mitsuru Takenaka, Shinichi Takagi
    Improvement of Electrical Properties of InGaAs MOS Interfaces by Inserting La Oxide Interfacial Layers into InGaAs Gate Stacks
    第62回応用物理学会春季学術講演会,12a-P12-6,東海大学湘南キャンパス,2015年3月12日.
  6. 高島 成也、一宮 佑希、竹中 充、高木 信一
    III-V-OI基板上における量子井戸インターミキシングの検討
    第62回応用物理学会春季学術講演会,12p-A17-15,東海大学湘南キャンパス,2015年3月12日.
  7. 野口 将高、韓 在勲、藤方 潤一、中村 隆宏、竹中 充
    Si光変調器に向けた歪SiGe成長に関する検討
    第62回応用物理学会春季学術講演会,12a-A16-10,東海大学湘南キャンパス,2015年3月12日.
  8. 武内 和治、金 栄現、竹中 充、高木 信一
    歪SiGeインターリーブPN接合型光変調器の検討
    第62回応用物理学会春季学術講演会,12a-A16-9,東海大学湘南キャンパス,2015年3月12日.
  9. Minsoo Kim, Yuki K. Wakabayashi, Ryosho Nakane, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi
    Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs
    第62回応用物理学会春季学術講演会,11a-A23-9,東海大学湘南キャンパス,2015年3月11日.
  10. Xiao Yu, Jian Kang, Rui Zhang, Mitsuru Takenaka, Shinichi Takagi
    Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut GeOI substrates
    第62回応用物理学会春季学術講演会,11a-A23-2,東海大学湘南キャンパス,2015年3月11日.
  11. ジ サンミン、市川 磨、長田 剛規、山田 永、竹中 充、高木 信一
    高In組成InGaAs量子井戸層の挿入によるプレーナ型InGaAsトンネルFETの性能向上の実証
    第62回応用物理学会春季学術講演会,11a-A23-10,東海大学湘南キャンパス,2015年3月11日.
  12. 植田 大貴、金 閔洙、竹中 充、高木 信一
    ひずみSOIトンネルFETの作製と電気的特性
    第62回応用物理学会春季学術講演会,11a-A23-8,東海大学湘南キャンパス,2015年3月11日.
  13. 西 康一、横山 正史、横山 春喜、星 拓也、杉山 弘樹、竹中 充、高木 信一
    Si上フロントゲートInAs/GaSb-OI p-MOSFETの移動度向上
    第62回応用物理学会春季学術講演会
    11a-A23-5,東海大学湘南キャンパス,2015年3月11日.
  14. 高木 信一, 野口宗隆, 竹中 充
    Zn拡散ソースを用いたプレーナ型InGaAs トンネルFET
    電子情報通信学会総合大会, CI-4-3, 立命館大学 びわこ・くさつキャンパス,2015年3月10日.
  15. 一宮 佑希, 竹中 充, 高木 信一,
    III-V-OI 基板の耐熱性向上技術および低抵抗横型PIN 接合形成技術
    電子情報通信学会レーザ・量子エレクトロニクス研究会 (LQE), 8, 機会振興会館,2014年12月19日.
  16. 韓在勲,竹中充,高木信一
    プラズマ後窒化HfO2/Al2O3/SiGe0.32 MOS界面の電極依存性
    第75回応用物理学会秋季学術講演会,19p-A17-7,北海道大学札幌キャンパス,2014年9月19日.
  17. 蔡偉立,竹中充,高木信一
    Improvement of S-factor method for evaluation of MOS interface state density
    第75回応用物理学会秋季学術講演会,19a-A17-12,北海道大学札幌キャンパス,2014年9月19日.
  18. 佐々木和哉,竹中充,高木信一
    グラフェンフォトディテクタの高性能化に向けた金属/グラフェン界面におけるフェルミ準位変化の評価
    第75回応用物理学会秋季学術講演会,18p-A18-15,北海道大学札幌キャンパス,2014年9月18日.
  19. 亢健,玉虓,竹中充,高木信一
    Ge-on-Insulator fabrication by smartcut technology for Ge CMOS photonics platform
    第75回応用物理学会秋季学術講演会,18p-A18-14,北海道大学札幌キャンパス,2014年9月18日.
  20. 金佑彊,高木信一,竹中充
    Effects of thinning condensation UTB GOI films by additional thermal oxidation on GOI Characteristics
    第75回応用物理学会秋季学術講演会,18p-A16-11,北海道大学札幌キャンパス,2014年9月18日.
  21. 一宮佑希,横山正史,竹中充,高木信一
    小型低クロストークInGaAsP細線導波路光スイッチの作製
    第75回応用物理学会秋季学術講演会,18a-C6-4,北海道大学札幌キャンパス,2014年9月18日.
  22. 嘉陽田達矢,竹中充,高木信一
    半導体-金属遷移を利用したグラフェン光変調器の変調効率の検討
    第75回応用物理学会秋季学術講演会,17p-PA3-5,北海道大学札幌キャンパス,2014年9月17日.
  23. Y. Cheng,一宮佑希,竹中充,高木信一
    Dark current reduction of waveguide InGaAs MSM photodetector on III-V CMOS photonics platform by InAlAs cap layer
    第75回応用物理学会秋季学術講演会,17p-C6-4,北海道大学札幌キャンパス,2014年9月17日.
  24. 西康一,横山正史,横山春喜,星拓也,杉山弘樹,竹中充,高木信一
    基板貼り合わせ法により作製したSi上フロントゲートGaSb-OI p-MOSFETの動作実証
    第75回応用物理学会秋季学術講演会,17a-PA3-4,北海道大学札幌キャンパス,2014年9月17日.
  25. 金ミンス,若林勇希,中根了昌,竹中充,高木信一
    Ge/Si hetero-junction TFETs with in-situ boron-doped Ge-source
    第75回応用物理学会秋季学術講演会,17a-PA3-2,北海道大学札幌キャンパス,2014年9月17日.

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