Publications/2015
Paper list of Takagi and Takenaka Group : ALL LIST
2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | Before 2007
[Journal Paper] [International conference Paper] [Domestic conference Paper & others]
2015
Journal Paper
- M.-S. Kim, Y. Wakabayashi, M. Yokoyama, R. Nakane, M. Takenaka and S. Takagi
Electrical Characteristics of Ge/Si Hetero-Junction Tunnel Field-Effect Transistors and Their Post Metallization Annealing Effect
IEEE Trans. Electron Devices, vol. 62, no. 1 (2015) 9-14 - X. Yu, R. Zhang, J. Kang, T. Maeda, T. Itatani, T. Osada, M. Hata, M. Takenaka, and S. Takagi
Ultrathin Body Germanium-on-Insulator (GeOI) Pseudo-MOSFETs Fabricated by Transfer of Epitaxial Ge Films on III-V Substrates
ECS Solid State Letters, 4 (2) P15-P18 (2015) - M. Yokoyama, H. Yokoyama, M. Takenaka and S. Takagi
Ultrathin body GaSb-on-insulator p-channel met-al-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding
Appl. Phys. Lett., 106, 073503 (2015) - M. Yokoyama, H. Yokoyama, M. Takenaka and S. Takagi
Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties
Appl. Phys. Lett., vol.106, 122902 (2015) - W.-L. Cai, M. Takenaka and S. Takagi
Improvement of S-factor method for evaluation of MOS interface state density
Jpn. J. Appl. Phys., 54 (2015) 04DC07 - K. Tanaka, R. Zhang, M. Takenaka and S. Takagi
Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance
Jpn. J. Appl. Phys., 54 (2015) 04DA02 - W.-K. Kim, M. Takenaka and S. Takagi
Properties of ultrathin-body condensation Ge-On-Insulator films thinned by additional thermal oxidation
Jpn. J. Appl. Phys., 54 (2015) 04DA05 - Y.-H. Kim, J. Fujikata, S. Takahashi, M. Takenaka and S. Takagi
Demonstration of record-low injection-current variable optical attenuator based on strained SiGe with optimized lateral pin junction
Optics Express, vol. 23(9) pp. 12354-12361 (2015) (10.1364/OE.23.012354) - X. Yu, J. Kang, R. Zhang, W.-L. Cai, M. Takenaka and S. Takagi
Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs
Microelectron. Eng., vol. 147, pp. 196-200 (2015). (10.1016/j.mee.2015.04.063) - M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka and S. Takagi
Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation
Microelectron. Eng., vol. 147, pp. 244-248 (2015). (10.1016/j.mee.2015.04.079) - S. Takagi, R. Zhang, J. Suh, S.-H. Kim, M. Yokoyama, K. Nishi and M. Takenaka
III-V/Ge Channel MOS Device Technologies in Nano CMOS era
Jpn. J. Appl. Phys. 54, 06FA01 (2015) (10.7567/JJAP.54.06FA01) - J. Kang, R. Zhang, M. Takenaka, and S. Takagi
Suppression of Dark Current in GeOx Passivated Germanium Metal-Semiconductor-Metal Photodetector by Plasma Post-Oxidation
Opt. Exp. Vol. 23, No. 13, pp. 16967-16976 (2015). (10.1364/OE.23.016967) - Y.-H. Kim, M. Takenaka and S. Takagi
Numerical Analysis of Carrier-Depletion Strained SiGe Optical Modulators with Vertical P-N Junction
IEEE J. Quantum Electron., vol. 51(04), 5200107 (2015). (DOI:10.1109/JQE.2015.2405931) - K. Nishi, M. Yokoyama, H. Yokoyama, T. Hoshi, H. Sugiyama, M. Takenaka and S. Takagi
Effects of buffered HF cleaning on metal-oxide-semiconductor interface properties of Al2O3/InAs/GaSb structures
Appl. Phys. Express, vol. 8(8), 061203 (2015). (DOI: 10.7567/APEX.8.061203) - Y. Cheng, Y. Ikku, M. Takenaka, and S. Takagi
Surface leakage reduction in MSM InGaAs photodetector on III–V CMOS photonics platform
IEEE Photonics Technology Letters, vol. 27, no. 14, pp. 1569-1572 (2015). (DOI: 10.1109/LPT.2015.2432052) - J. Kang, X. Yu, M. Takenaka and S. Takagi
Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding,
Materials Science in Semiconductor Processing, vol., (2015). (DOI: 10.1016/j.mssp.2015.07.021) - M. Noguchi, S.-H. Kim, M. Yokoyama, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi
High Ion /Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions
J. Appl. Phys. 118, 045712 (2015) (DOI: 10.1063/1.4927265) - C.-Y. Chang, O. Ichikawa, T. Osada, M. Hata, H. Yamada, M. Takenaka, and S. Takagi
Impact of La2O3 interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by atomic-layer-deposition
J. Appl. Phys. 118, 085309 (2015) (DOI: 10.1063/1.4929650) - W. Cai, M. Takenaka and S. Takagi
Effectiveness of surface potential fluctuation for representing inversion-layer mobility limited by Coulomb scattering in MOFEETs
IEEE Electron Device Lett., vol. 36, no. 11 (2015) pp. 1183-1185 (DOI: 10.1109/LED.2015.2477360) - J.-K. Suh, N. Taoka, M. Takenaka and S. Takagi
Effects of additional oxidation after Ge condensation on electrical properties of germanium-on-insulator p-channel MOSFETs
Solid State Electron., vol. 117, March (2016) pp. 77-87 (DOI: 10.1016/j.sse.2015.11.014) - M. Tsujimura, H. Kitai, H. Shiomi, K. Kojima, K. Fukuda, K. Sakamoto, K. Yamasaki, S. Takagi and H. Okumura,
Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C-V Measurement
Materials Science Forum, ISSN: 1662-9760, Vol. 858, pp. 441-444 (DOI: 10.4028/www.scientific.net/MSF.858.441) - X. Yu, J. Kang, R. Zhang, M. Takenaka and S. Takagi
Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-CutTM GeOI substrates
Solid-State Electronics, Volume 115, Part B, January (2016), pp. 120-125 (DOI: 10.1016/j.sse.2015.08.021) - Y.-H. Kim, J. Fujikata, S. Takahashi, M. Takenaka and S. Takagi
First demonstration of SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect
Opt. Express 24(3), 1979-1985 (2016) (DOI: 10.1364/OE.24.001979) - R. Zhang, X. Yu, M. Takenaka and S. Takagi
Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs with 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks
IEEE Trans. Electron Devices, vol. 63, no. 2 (2016) p. 558-564 (DOI: 10.1109/TED.2015.2509961)
[Journal Paper] [International conference Paper] [Domestic conference Paper & others]
International conference Paper
- X. Yu, J. Kang, R. Zhang, M. Takenaka and S. Takagi
Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut GeOI substrates
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp.161-164, January 26-28, 2015 - Bologna, Italy - M.-S. Kim, Y. Wakabayashi, R. Nakane, M. Yokoyama, M. Takenaka and S. Takagi
Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs
8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, Atomically Controlled Processing for Ultralarge Scale Integration pp. 9-10, Jan. 29-30, 2015, Tohoku University, Sendai, Japan - Y.-H. Kim, J. Fujikata, S. Takahashi, M. Takenaka and S. Takagi
SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect in strained SiGe
Optical Fiber Communication Conference (OFC2015), Tu2A.7, Los Angels, 24 March 2015. - S. Takagi, R. Zhang, C.-Y. Chang, J.-H. Han, M. Yokoyama and M. Takenaka
Gate stack technologies for high mobility channel MOSFETs
2015 MRS Spring Meeting & Exhibit, Sympoium AA, “Materials for Beyond the Roadmap Devices in Logic, Power and Memory April 6-10 (2015), San Francisco, California - S. Takagi
Nano Device Technologies for Ultra Low Power LSIs
International Nanotechnology Conference on Communication and Cooperation (INC11), May 11-13 (2015), Fukuoka, Japan, p. 27 - S. Takagi, W.-K. Kim, X. Yu, J.-h. Han, R. Zhang and M. Takenaka
Ge/SiGe CMOS device technology for future logic LSIs
E-MRS Spring meeting 2015, Symposium KTransport and photonics in group IV-based nanodevices", Lille (France), May 11-15 (2015) - J. Kang, X. Yu, M. Takenaka and S. Takagi
Impact of Thermal Annealing on Ge-on-Insulator Substrate fabricated by wafer bonding
E-MRS Spring meeting 2015, Symposium K, "Transport and photonics in group IV-based nanodevices", Lille (France), May 11-15 (2015) - S. Takagi, S. H. Kim, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. C. Kao and M. Takenaka
High Performance III-V-on-Insulator MOSFETs on Si Realized By Direct Wafer Bonding Applicable to Large Wafer Size
227th Spring meeting of the Electrochemical Society, Symposium H01 “Advanced CMOS-Compatible Semiconductor Devices 17 May 24-28 (2015), Chicago, Illinois, USA, ECS Transactions, 66 (5), pp. 27-35 (2015) (DOI:10.1149/06605.0027ecst) - S. Takagi and M. Takenaka
III-V/Ge MOSFETs and Tunneling FETs on Si platform for Low Power Logic Applications
13th International Meeting for Future of Electron Devices, Kansai (IMFEDK), p. 18-19, June 4-5, 2015. Ryukoku University Avanti Kyoto Hall, Kyoto, Japan (DOI: 10.1109/IMFEDK.2015.7158488) - S. Takagi, M.-S. Kim, M. Noguchi, S.-M. Ji, K. Nishi and M. Takenaka
III-V and Ge tunneling FET technologies for low power LSIs
VLSI symposium (2015), p. T22-T23 (DOI: 10.1109/VLSIT.2015.7223687) - K. Nishi, M. Yokoyama, H. Yokoyama, T. Hoshi, H. Sugiyama, M. Takenaka, and S. Takagi
High hole mobility front-gate InAs/InGaSb-OI single structure CMOS on Si
VLSI symposium (2015), p. T174-T175 (DOI: 10.1109/VLSIT.2015.7223667) - M. Takenaka and S. Takagi
III-V CMOS photonics on Si for high-performance electronic-photonic integrated circuits
submitted to the International Conference on Materials for Advanced Technologies (ICMAT) 2015, June 28-July 3, Singapore - X. Yu, J. Kang, R. Zhang, W.-L. Cai, M. Takenaka and S. Takagi
Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs
19th Conference on "Insulating Films on Semiconductors" (INFOS), pp. 215-216, Udine, Italy, June 29 - July 2, 2015. - M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka and S. Takagi
Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation
19th Conference on "Insulating Films on Semiconductors" (INFOS), pp. 213-214, Udine, Italy, June 29 - July 2, 2015. - J. Kang, M. Takenaka, and S. Takagi
Impact of GeOx passivation on Dark Current for Wafer-bonded Ge-on-Insulator Metal-Semiconductor-Metal Photodetector
Group IV photonics - J. Fujikata, M. Noguchi, Y. Kim, S. Takahashi, T. Nakamura, and M. Takenaka
High speed and highly efficient Si optical modulator with strained SiGe layer
International Conference on Group IV Photonics (GFP2015), WD2, Vancouver, Canada, 26 August 2015. DOI: 10.1109/Group4.2015.7305930 - S. Takagi and M. Takenaka
Advanced Nano CMOS using Ge/III-V semiconductors for Low Power Logic LSIs
15th IEEE International Conference on Nanotechnology (2015), pp. 654-658, 27 - 30 JULY 2015 | ROME (ITALY) - S. Takagi and M. Takenaka
Ge/III-V MOS Device Technologies for Low Power Integrated Systems
45th European Solid-State Device Conference (ESSDERC), pp. 20-25, September 14-18, 2015, Graz, Austria - S. Takashima, Y. Ikku, M. Takenaka and S. Takagi
The influence of III-V on insulator structure on quantum well intermixing
2015 International Conference on Solid State Devices and Materials, Sapporo (2015), A-7-5, pp. 632-633 - J.-H. Han, M. Takenaka and S. Takagi
Void reduction of the direct wafer bonding using atomic layer deposition Al2O3/HfO2 gate stack for MOS optical modulators
2015 International Conference on Solid State Devices and Materials, Sapporo (2015), A-3-4, pp. 594-595 - C.-Y. Chang, M. Takenaka and S. Takagi
Impact of La2O3 interfacial layers on InGaAs MOS interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by ALD
2015 International Conference on Solid State Devices and Materials, Sapporo (2015), N-5-2, pp. 1130-1131 - J.-K. Park, M. Takenaka and S. Takagi
Low-resistivity lateral PIN junction fomed by Ni-InGaAsP alloy for carri-er-injection InGaAsP photonic devices on III-V CMOS photonics platform
2015 International Conference on Solid State Devices and Materials, Sapporo (2015), PS-7-6, pp. 232-233 - Y. Cheng, Y. Ikku, M. Takenaka and S. Takagi
Waveguide InGaAs Metal-semiconductor-metal Photodetector Monolithically Integrated with InP Grating Coupler on III-V CMOS Photonics Platform
2015 International Conference on Solid State Devices and Materials, Sapporo (2015), A-7-2, pp. 626-627 - J. Kang, M. Takenaka and S. Takagi
First Demonstration of Ge Waveguide Platform on Ge-on-Insulator for Mid-Infrared Integrated Photonics
ECOC - S. Takagi, M. Kim, M. Noguchi, K. Nishi, M. Takenaka
Tunneling FET Device Technologies Using III-V and Ge Materials
4th Berkeley Symposium on Energy Efficient Electronic Systems (E3S), October 2, 2015, University of California, Berkeley, California, USA,p. 1-2 (DOI: 10.1109/E3S.2015.7336800) - S. Takagi
Tunneling FET Device
STEEP Transistors Workshop, October 6, 2015, University of Notre Dame, Notre Dame, IN, USA - S. Takagi, C. Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke, J. H. Han, and M. Takenaka
MOS Interface Control Technologies for Advanced III-V/ Ge Devices
228th Fall meeting of the Electrochemical Society, D04 - Semiconductors, Dielectrics, and Metals for Nanoelectronics 13, October 11-16, 2015, Pheonix, AZ, ECS Transactions, 69 (5) p. 37-51 (2015) (DOI: 10.1149/06905.0037ecst) - S. Takagi, M. Kim, M. Noguchi, K. Nishi, and M.Takenaka
Tunneling FET Technologies Using III-V and Ge Materials
228th Fall meeting of the Electrochemical Society, G04 - ULSI Process Integration 9, October 11-16, 2015, Pheonix, AZ, ECS Transactions, 69 (10) p. 99-108 (2015) (DOI: 10.1149/06910.0099ecst) - M. Tsujimura, H. Kitai, H. Shiomi, K. Kojima, K. Fukuda, K. Sakamoto, K. Yamasaki, S. Takagi and H. Okumura
Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C-V Measurement
16th International Conference on Silicon Carbide and Related Materials (ISCRM), Giardini Naxos, Italy, October 4 - 9, 2015. - J.-h. Han, M. Takenaka and S. Takagi
Improvement of the modulation bandwidth for MOS optical modulators using p-SiGe slab
Asia Communications and Photonics Conference (ACP), Hong Kong, November 19-23, 2015. - S. Takagi and M. Takenaka
Low Power MOS Device Technologies based on Heterogeneous Integration
2015 International Electron Devices and Materials Symposia (IEDMS), Nov. 19-20, 2015, at Kun Shan University, Tainan, Taiwan - J.-H. Han, M. Takenaka and S. Takagi
Bandwidth enhancement of Si MOS optical modulators using strained SiGe slab
5th International Symposium on Photonics and Electronics Convergence (ISPEC2015), P-4, Tokyo, December 2015. - J. Fujikata, M. Noguchi, Y. Kim, J. Han, S. Takahashi, T. Nakamura, and M. Takenaka
High Speed and Highly Efficient Si Optical Modulator with Strained SiGe Layer,
5th International Symposium on Photonics and Electronics Convergence (ISPEC2015), P-4, Tokyo, 1 December 2015. - C.-Y. Chang, M. Takenaka and S. Takagi
Improvement of Electrical Characteristics of La2O3/InGaAs Gate Stacks by Ultra-thin ALD Al2O3 Capping Layers
46th IEEE Semiconductor Interface Specialists Conference (SISC) (2015) 7.2 - M. Ke, X. Yu, M. Takenaka and S. Takagi
Properties of slow traps of ALD Al2O3/GeOx/Ge gate stacks with plasma post oxidation
46th IEEE Semiconductor Interface Specialists Conference (SISC) (2015) 8.2 - M. Takenaka, Y. Kim, J. Han, J. Kang, Y. Ikku, Y. Cheng, J.-K. Park, S.-H Kim, and S. Takagi
CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V on Si
IEDM (2015) p. 815-818 (DOI: 10.1109/IEDM.2015.7409809) - X. Yu, J. Kang, M. Takenaka and S. Takagi
Experimental Study on Carrier Transport Properties in Extremely-Thin Body Ge-on-Insulator (GOI) p-MOSFETs with GOI Thickness down to 2 nm
IEDM (2015) p. 20-23 (DOI: 10.1109/IEDM.2015.740961) - M. Ke, X. Yu, M. Takenaka and S. Takagi
Control of slow traps of ALD Al2O3/Ge-based gate stacks with post plasma process
9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar, "Atomically Controlled Processing for Ultralarge Scale Integration Tohoku University, Sendai, JAPAN, Jan. 11-12, 2016 - J. Kang, X. Yu, M. Takenaka and S. Takagi
Design and Characterization of Ge Passive Waveguide Components and Thermo-optic Effect on Ge-on-Insulator for Mid-Infrared Photonics
OFC 2016 - J.-K. Park, M. Takenaka and S. Takagi
InGaAsP variable optical attenuator with lateral PIN junction formed by Ni-InGaAsP and Zn diffusion on III-V on insulator wafer
MRS meeting (2016)
[Journal Paper] [International conference Paper] [Domestic conference Paper & others]
Domestic conference Paper & others
- 高木信一, 金閔洙, 野口宗隆, 池尙珉, 西康一, 竹中充,
低消費LSIのためのIII-V族半導体およびGe/ひずみSOIトンネルFETテクノロジー
応用物理学会シリコンテクノロジー分科会共催研究集会第184回研究集会「先端CMOSデバイス・プロセス技術(VLSIシンポジウム特集)」, p. 6-11, 2015年8月17日, 甲南大学 - 玉虓, 亢健, 竹中充, 高木信―
[招待講演]極薄膜Ge-On-Insulator(GOI) p-MOSFETのキャリア輸送特性
電子情報通信学会SDM研究会・応用物理学会シリコンテクノロジー分科会共催研究集会「先端CMOSデバイス・プロセス技術(IEDM特集)」, p. 2-5, 2016年 1月28日(木), 機械振興会館 - 竹中充, 金栄現, 韓在勲, 亢健, 一宮佑希, 程勇鵬, 朴珍權, 金相賢, 高木信一
[招待講演]Si 上異種半導体集積によるCMOS フォトニクス
電子情報通信学会SDM研究会・応用物理学会シリコンテクノロジー分科会共催研究集会「先端CMOSデバイス・プロセス技術(IEDM特集)」, p. 18-20, 2016年 1月28日(木), 機械振興会館 - 高木信一
チャネルエンジニアリングによる高性能トンネルFET
電気学会ナノエレクトロニクス新機能創出・集積化技術専門員会「トンネル現象を利用したデバイスとその物理」平成28年3月9日(水) 13:00〜17:20, 早稲田大学研究開発センター - 野口将高, 藤方潤一, 高橋重樹, 韓 在勲, 中村隆宏, 竹中 充
歪SiGeを用いたSi光変調器の作製プロセス検討
電子情報通信学会総合大会,C3-30,2016年3月16日,九州大学伊都キャンパス. - 韓在勲,竹中充,高木信一
貼り合せMOS型光変調器実現に向けたAl2O3/HfO2界面によるボイド低減手法の検討
第76回応用物理学会秋季学術講演会 - 高島成也, 一宮佑希, 竹中充, 高木信一
III-V-OI基板のパターニングによるボイド低減の検討
第76回応用物理学会秋季学術講演会 - M. Ke, X. Yu, R. Zhang, J. Kang, C. Chang, M. Takenaka, and S. Takagi
Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation
第76回応用物理学会秋季学術講演会[14a-4C-5] - 安大煥, 竹中充, 高木信一
基板貼り合わせ法によるSi基板上 InGaAs-OI トンネル FET の動作実証[16a-1C-5]
第76回応用物理学会秋季学術講演会 - 竹中充, 高木信一
III-V on SiC 基板を用いた光集積回路プラットフォームの提案
第76回応用物理学会秋季学術講演会 - X. Yu, J. Kang, R. Zhang, W.-L. Cai, M. Takenaka and S. Takagi
Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs
第76回応用物理学会秋季学術講演会[13p-4C-6] - Rui Zhang Mitsuru Takenaka Shinichi Takagi
High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation
第76回応用物理学会秋季学術講演会[13p-4C-2] - Minsoo Kim Yuki K. Wakabayashi Ryosho Nakane Masafumi Yokoyama Mitsuru Takenaka Shinichi Takagi
[Young Scientist Presentation Award Speech] Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs
第76回応用物理学会秋季学術講演会[16a-1C-1] - 張志宇, 竹中充, 高木信一
極薄ALD-Al2O3キャップ層を用いたLa2O3/InGaAs MOS界面の改善
第63回応用物理学会春季学術講演会[20p-S221-2] - 後藤高寛, 満原学, 星拓也, 杉山弘樹, 竹中充, 高木信一
GaAsSb/InGaAs 縦型トンネルFETの動作実証
第63回応用物理学会春季学術講演会[20p-S422-12] - 関根尚希, 韓在勲, 竹中充, 高木信一
III-V CMOSフォトニクス・プラットフォーム上空乏型InGaAsP光変調器の検討
第63回応用物理学会春季学術講演会 - 韓在勲, 竹中充, 高木信一
歪SiGe を用いたMOS型光変調器の変調帯域改善 に関する検討
第63回応用物理学会春季学術講演会 - 小澤悠平, 竹中充, 高木信一
コンダクタンス法による二硫化モリブデンMOS界面特性評価
第63回応用物理学会春季学術講演会[20p-S221-1] - 安大煥, 竹中充, 高木信一
高In組成InGaAs量子井戸を用いたInGaAs QW TFETの電気特性における性能評価
第63回応用物理学会春季学術講演会[20p-S422-13] - 柯夢南, 玉虓, 竹中充, 高木信一
Al2O3/GeOx/Ge MOS界面の遅い準位密度に与える界面構造の影響
第63回応用物理学会春季学術講演会[20a-S221-12] - 嶋田絢、中根了昌、竹中充、高木信一
SdH振動を用いたひずみSi pMOSFETにおける価電子帯有効質量の評価
第63回応用物理学会春季学術講演会[21a-S422-6] - 佐々木和哉,竹中充, 高木信一
光変調器応用に向けたグラフェンスロット導波路の試作
第63回応用物理学会春季学術講演会 - 金佑彊, 竹中充, 高木信一
温度サイクルを減らした酸化濃縮法による高圧縮ひずみ極薄膜Ge-OI 構造の実現
第63回応用物理学会春季学術講演会[21a-S422-7]