TAKAGI & TAKENAKA Laboratory Group

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Publications/2016

Paper list of Takagi and Takenaka Group : ALL LIST

2016 |2015 | 2014 | 2013  | 2012 | 2011 | 2010 | 2009 | 2008 | Before 2007

[Journal Paper]  [International conference Paper]

2016

Journal Paper

  1. N. Sekine, J.-H. Jan, S. Takagi, and M. Takenaka, “Numerical analysis of carrier-depletion InGaAsP optical modulator with lateral PN junction formed on III–V-on-insulator wafer,” Jpn. J. Appl. Phys., Vol. 56, 04CH09, 2017. DOI: 10.7567/JJAP.56.04CH09
  2. X. Yu, J. Kang, M. Takenaka, and Shinichi Takagi, “Evaluation of mobility degradation factors and performance improvement of ultrathin-body germanium-on-insulator MOSFETs by GOI thinning using plasma oxidation,” IEEE Trans. Electron Devices, vol. 64, no. 4, pp. 1418 – 1425, 2017. DOI: 10.1109/TED.2017.2662217
  3. M. Takenaka, Y. Kim, J. Han, J. Kang, Y. Ikku, Y. Cheng, J. Park, M. Yoshida, S. Takashima, and S. Takagi, “Heterogeneous CMOS photonics based on SiGe/Ge and III-V semiconductors integrated on Si Platform”, IEEE J. Sel. Top. Quantum Electron., vol. 23, No. 3, 8200713, 2017 (Invited). DOI: 10.1109/JSTQE.2017.2660884
  4. M. Yokoyama, H. Yokoyama, M. Takenaka, and S. Takagi, “InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure”, Appl. Phys. Lett., vol. 109, 213505, 2016. DOI: 10.1063/1.4968187
  5. M. Yokoyama, R. Suzuki, N. Taoka, M. Takenaka, and S. Takagi, “Impact of surface orientation on (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and on their Al2O3/InGaAs metal-oxide-semiconductor interface properties”, Appl. Phys. Lett., vol. 109, 182111, 2016. DOI: 10.1063/1.4966284
  6. M. Takenaka, Y. Kim, J. Han, J. Kang, and S. Takagi, “Challenges and opportunities of near and mid-infrared photonics based on SiGe and Ge,” ECS Trans., vol. 75, no. 8, pp. 447-459, 2016 (invited). DOI: 10.1149/07508.0447ecst
  7. N. Taoka, M. Yokoyama, S.-H. Kim, R. Suzuki, R. Iida, M. Takenaka, S. Takagi, “Influence of interface traps inside the conduction band on the capacitance–voltage characteristics of InGaAs metal–oxide–semiconductor capacitors”, Appl. Phys. Express., Vol. 9, 111202, 2016. DOI: 10.7567/APEX.9.111202
  8. J. Han, M. Takenaka, and S. Takagi, “Analysis of interface trap density of plasma post-nitrided Al2O3/SiGe MOS interface with high Ge content using high-temperature conductance method”, J. Appl. Phys., vol. 120, 125707, 2016. DOI: 10.1063/1.4963877
  9. M. Ke, X. Yu, C. Chang, M. Takenaka, and S. Takagi, “Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation”, Appl. Phys. Lett., vol. 109, 032101, 2016. DOI: 10.1063/1.4958890
  10. J. Kang, M. Takenaka, and S. Takagi, “Novel Ge waveguide platform on Ge-on-insulator wafer for mid-infrared photonic integrated circuits,” Optics Express, vol. 24, no. 11, pp. 11855-11864, 2016. DOI: 10.1364/OE.24.011855
  11. J.-K. Park, J. Han, M. Takenaka, and S. Takagi, “InGaAsP variable optical attenuator with lateral P-I-N junction formed by Ni-InGaAsP and Zn diffusion on III-V on insulator wafer,” MRS Advances, vol.1 no. 48, pp. 3295-3300, 2016. DOI: 10.1557/adv.2016.339
  12. S. Takagi, M. Noguchi, M. Kim, S.-H. Kim, C.-Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke, and M. Takenaka, “III-V/Ge MOS device technologies for low power integrated Systems,” Solid-state Electronics, vol. 125, pp. 82-102, 2016 (invited). DOI: 10.1016/j.sse.2016.07.002
  13. S. Takashima, Y. Ikku, M. Takenaka, and S. Takagi, “Effect of III-V on insulator structure on quantum well intermixing,” Jpn. J. Appl. Phys., Vol. 55, 04EH13, 2016. DOI: 10.7567/JJAP.55.04EH13
  14. J. Han, M. Takenaka, and S. Takagi, “Study on void reduction in direct wafer bonding using Al2O3/HfO2 bonding interface for high-performance Si high-k MOS optical modulators,” Jpn. J. Appl. Phys., Vol. 55, 04EC06, 2016. DOI: 10.7567/JJAP.55.04EC06
  15. J.-K. Park, M. Takenaka, and S. Takagi, “Low resistivity lateral P-I-N junction formed by Ni-InGaAsP alloy for carrier injection InGaAsP photonic devices,” Jpn. J. Appl. Phys., Vol. 55, 04EH04, 2016. DOI: 10.7567/JJAP.55.04EH04
  16. Y. Cheng, Y. Ikku, M. Takenaka, and S. Takagi, “Low-dark-current waveguide InGaAs metal–semiconductor–metal photodetector monolithically integrated with InP grating coupler on III–V CMOS photonics platform,” Jpn. J. Appl. Phys., Vol. 55, 04EH01, 2016. DOI: 10.7567/JJAP.55.04EH01
  17. R. Zhang, P.-C. Huang, N. Taoka, M. Yokoyama, M. Takenaka, and S. Takagi, “Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation”, Appl. Phys. Lett., vol. 108, 052903, 2016. DOI: 10.1063/1.4914453

[Journal Paper]  [International conference Paper]

International conference Paper

  1. J. Han, S. Takagi, and M. Takenaka, “High-Efficiency O-Band Mach-Zehnder modulator based on InGaAsP/Si hybrid MOS capacitor,” Optical Fiber Communication Conference (OFC2017), W3E.2, Los Angeles, 22 March 2017.
  2. J. Park, S. Takagi, and M. Takenaka, “Monolithic integration of InGaAsP MZI modulator and InGaAs driver MOSFET using III-V CMOS photonics,” Optical Fiber Communication Conference (OFC2017), W3E.4, Los Angeles, 22 March 2017.
  3. C. Yokoyama, C.-Y. Chang, M. Takenaka, and S. Takagi, “In content dependence of pre-treatment effects on Al2O3/InxGa1-xAs MOS interface properties,” Electron Devices Technology and Manufacturing Conference (EDTM2017), 3A-3, Toyama International Conference Center, 1 March 2017. DOI: 10.1109/EDTM.2017.7947493
  4. S. Takagi and M. Takenaka, “Ultra-low Power MOSFETs and Tunneling FETs using III-V and Ge,” International Workshop on Nano device Technologies, Hiroshima University, 2 March 2017 (invited).
  5. M. Ke, M. Takenaka, and S. Takagi, “Influence of ALD High-k film deposition on plasma oxidation GeOx/Ge gate stacks,” 10th International Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku University, Sendai, 13-14 Februry 2017.
  6. S. Takagi, M. Ke, X. Yu, R. Zhang, and M. Takenaka, “Critical issues and Challenges of High k Gate Stacks for Ge/GOI MOSFETs,” IEEE Semiconductor Interface Specialists conference (SISC2016), 7.1, San Diego, USA, 9 December 2016 (invited).
  7. C.-Y. Chang, C. Yokoyama, M. Takenaka, and S. Takagi, “Characterization of Electrical and Physical Properties of W/La2O3/InGaAs MOS Interfaces,” IEEE Semiconductor Interface Specialists conference (SISC2016), 5.2, San Diego, USA, 8 December 2016.
  8. T. Gotow, M. Mitsuhara, T. Hoshi, H. Sugiyama, M. Takenaka, and S. Takagi, “Improvement of GaAsSb MOS interface properties by using ultrathin InGaAs interfacial layers,” IEEE Semiconductor Interface Specialists conference (SISC2016), 6.3, San Diego, USA, 8 December 2016.
  9. M. Takenaka, Y. Ozawa, J. Han, and S. Takagi, “Quantitative evaluation of energy distribution of interface trap density at MoS2 MOS interfaces by the Terman method,” International Electron Devices Meeting (IEDM’16), 5.8, San Francisco, 5 December 2016.
  10. C.-Y. Chang, K. Endo, K. Kato, C. Yokoyama, M. Takenaka, and S. Takagi, “Impact of La2O3/InGaAs MOS interface on InGaAs MOSFET performance and its application to InGaAs negative capacitance FET,” International Electron Devices Meeting (IEDM’16), 12.5, San Francisco, 6 December 2016.
  11. S. Takagi, D. Ahn, M. Noguchi, T. Gotow, K. Nishi, M. Kim, and M. Takenaka, “Tunneling MOSFET technologies using III-V/Ge materials,” International Electron Devices Meeting (IEDM’16), 19.5, San Francisco, 6 December 2016 (invited).
  12. J. Han, M. Takenaka, and S. Takagi, “Extremely high modulation efficiency III-V/Si hybrid MOS optical modulator fabricated by direct wafer bonding,” International Electron Devices Meeting (IEDM’16), 25.5, San Francisco, 7 December 2016.
  13. M. Takenaka, “Ge-on-insulator platform for near and mid-infrared integrated photonics,” 6th International Symposium on Photonics and Electronics Convergence (ISPEC2016), C-2, Tokyo, 28 November 2016.
  14. J.-H. Han, S. Takagi, and M. Takenaka, “Estimation of modulation efficiency enhancement using an InGaAsP/Si hybrid MOS optical modulator,” 6th International Symposium on Photonics and Electronics Convergence (ISPEC2016), P-15, Tokyo, 29 November 2016.
  15. T. Fujigaki, J. Kang, S. Takagi, and M. Takenaka, “Investigation of Ge thermo-optic switch on the Ge CMOS Photonics platform,” 6th International Symposium on Photonics and Electronics Convergence (ISPEC2016), P-19, Tokyo, 29 November 2016.
  16. J. Fujikata, J.-H. Han, M. Noguchi, S. Takahashi, M. Takenaka, and T. Nakamura, “High speed and highly efficient Si optical modulator with in-situ B doped strained SiGe layer,” 6th International Symposium on Photonics and Electronics Convergence (ISPEC2016), P-7, Tokyo, 29 November 2016.
  17. K. Takeuchi, S. Takagi, and M. Takenaka, “Impact of lateral profile of implanted dopants in interleaved PN junctions on modulation efficiency of Si optical modulator,” 6th International Symposium on Photonics and Electronics Convergence (ISPEC2016), P-11, Tokyo, 29 November 2016.
  18. J. Kang, M. Takenaka, and S. Takagi, “Design and characterization of Ge passive waveguide components at 2-μm band for mid-infrared integrated photonics,” 6th International Symposium on Photonics and Electronics Convergence (ISPEC2016), P-3, Tokyo, 29 November 2016.
  19. S. Takagi, X. Yu, J. Kang, and M. Takenaka, “Carrier transport properties in extremely-thin body GOI p-MOSFETs,” Workshop on Atomically Controlled Processing for Ultra-large Scale Integration, the Forschungszentrum Jülich, Germany, 24-25 November 2016 (invited).
  20. M. Takenaka, Y. Kim, J. Han, J. Kang, and S. Takagi, “Challenges and opportunities of near and mid-infrared photonics based on SiGe and Ge,” 230th ECS Meeting, Symposium G05, 1968, Hawaii, USA, 4 October 2016 (invited).
  21. M. Takenaka, Y. Kim, J. Han, J. Kang, and S. Takagi, “CMOS photonics based on SiGe and Ge for near and mid-infrared photonic integrated circuits,” International Conference on Solid State Devices and Materials (SSDM2016), C-3-1, Tukuba, 28 September 2016 (invited).
  22. S. Takagi and M. Takenaka, “An extraction method of interface state density near conduction band edge at SiC MOS interfaces,” International Conference on Solid State Devices and Materials (SSDM2016), E-3-4, Tukuba, 28 September 2016.
  23. T. Gotow, M. Mitsuhara, T. Hoshi, H. Sugiyama, M. Takenaka, and S. Takagi, “Composition profile steepness on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical TFETs,” International Conference on Solid State Devices and Materials (SSDM2016), A-2-4, Tukuba, 27 September 2016.
  24. N. Sekine, J. Han, M. Takenaka, and S. Takagi, “Numerical analysis of InGaAsP carrier-depletion optical modulator on III-V CMOS photonics platform,” International Conference on Solid State Devices and Materials (SSDM2016), PS-7-11, Tukuba, 28 September 2016.
  25. J. Fujikata, M. Noguchi, J. Han, S. Takahashi, M. Takenaka, and T. Nakamura, “Record-high Modulation-efficiency Depletion-type Si-based optical modulator with in-situ B doped strained SiGe layer on Si waveguide for 1.3 m wavelength,” European Conference on Optical Communication (ECOC 2016), Düsseldorf, Tu3.A.4, 20 September 2016.
  26. J. Kang, M. Takenaka, and S. Takagi, “Ge waveguide photodetector on wafer-bonded Ge-on-insulator substrate monolithically integrated with amorphous Si waveguide,” European Conference on Optical Communication (ECOC 2016), Düsseldorf, W3.F.2, 21 September 2016.
  27. M. Takenaka, and S. Takagi, “Heterogeneous integration of SiGe/Ge and III-Vs on Si for electronic-photonic integrated circuit,” JSPS-OSA joing session, 16a-C301-6 Niigata, 16 September 2016 (invited).
  28. J. Han, M. Takenaka, and S. Takagi, “Feasibility study of III-V/Si hybrid MOS optical modulators consisting of n-InGaAsP/Al2O3/p-Si MOS capacitor formed by wafer bonding,” International Conference on Group IV Photonics (GFP2016), ThP16, Sanghai, China, 25 August 2016.
  29. M. Takenaka, and S. Takagi, “Heterogeneous integration of SiGe/Ge and III-V on Si for CMOS photonics,” International Meeting for Future of Electron Devices, Kansai (IMFEDK2016), A-2 Avanti Kyoto Hall, Kyoto, 23 June 2016 (invited).
  30. D. H. Ahn, S. M. Ji, M. Takenaka, and S. Takagi, “Performance improvement of InxGa1-xAs Tunnel FETs with Quantum Well and EOT scaling,” VLSI Symposium, 21-2, Hawaii, USA, 16 June 2016. DOI: 10.1109/VLSIT.2016.7573443
  31. M. Takenaka, and S. Takagi, “Si/III-V CMOS photonics for low-power electronic-photonic integrated circuits on Si platform,” Conference on Lasers and Electro-Optics (CLEO2016), SF2P.7, San Jose, 10 June 2016 (invited).
  32. S. Takagi and M. Takenaka, “III-V MOS device technologies for advanced CMOS and tunneling FET,” Indium Phosphide and Related Materials (IPRM’16), TuD4-1, Toyama, 26-30 May 2016 (invited). DOI: 10.1109/ICIPRM.2016.7528829
  33. M. Takenaka, Y. Kim, J. Han, J. Kang, Y. Ikku, Y. Cheng, J. Park, and S. Takagi, “Heterogeneous integration of SiGe/Ge and III-V for Si photonics,” Proc. SPIE 9891 (SPIE Photonics Europe), Silicon Photonics and Photonic Integrated Circuits V, 98911H, Brussels, 4-7 April 2016 (invited). DOI: 10.1117/12.2227457
©2007 Takagi & Takenaka Group.

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