TAKAGI & TAKENAKA Laboratory Group

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発表論文

高木・竹中研究室 発表論文一覧

高木・竹中研究室論文リスト:Index

2015年度 | 2014年度 | 2013年度 | 2012年度 | 2011年度 | 2010年度 | 2009年度 | 2008年度 | 2007年度以前  

2016論文一覧

  • NEW Masafumi Yokoyama, Haruki Yokoyama, Mitsuru Takenaka, and Shinichi Takagi
    InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure 
    Applied Physics Letters 109, 213505 (2016); doi: 10.1063/1.4968187
  • Masafumi Yokoyama, Rena Suzuki, Noriyuki Taoka, Mitsuru Takenaka, and Shinichi Takagi
    Impact of surface orientation on (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and on their Al2O3/InGaAs metal-oxide-semiconductor interface properties 
    Applied Physics Letters 109, 182111 (2016); doi: 10.1063/1.4966284
  • J. Han, M. Takenaka, and S. Takagi
    Analysis of interface trap density of plasma post-nitrided Al2O3/SiGe MOS interface with high Ge content using high-temperature conductance method 
    J. Appl. Phys., vol. 120, 125707, 2016. DOI: 10.1063/1.4963877
  • Noriyuki Taoka, Masafumi Yokoyama, Sang Hyeon Kim, Rena Suzuki, Ryo Iida, Mitsuru Takenaka and Shinichi Takagi
    Influence of interface traps inside the conduction band on the capacitance–voltage characteristics of InGaAs metal–oxide–semiconductor capacitors 
    Applied Physics Express, Vol 9, Number 11, DOI: 10.7567/APEX.9.111202
  • S. Takagi, M. Noguchi, M. Kim, S.-H. Kim, C.-Y. Chang, M. Yokoyama, K. Nishi, R. Zhang M. Ke, M. Takenaka
    III-V/Ge MOS device technologies for low power integrated systems 
    Solid-State Electronics 125 (2016) 82–102
  • M. Ke, X. Yu, C. Chang, M. Takenaka and S. Takagi
    Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation 
    Appl. Phys. Lett. 109, 032101 (2016); http://dx.doi.org/10.1063/1.4958890
  • Y. Kim, J. Fujikata, S. Takahashi, M. Takenaka, and S. Takagi
    First demonstration of SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect, 
    Optics Express Letters, vol. 24, no. 3, pp. 1979-1985, 2016. DOI: 10.1364/OE.24.001979
  • Munetaka Noguchi, SangHyeon Kim, Masafumi Yokoyama, Osamu Ichikawa, Takenori Osada, Masahiko Hata, Mitsuru Takenaka and Shinichi Takagi
    HIGH ION / IOFF AND LOW SUBTHRESHOLD SLOPE PLANAR-TYPE INGAAS TUNNEL FIELD EFFECT TRANSISTORS WITH ZN-DIFFUSED SOURCE JUNCTIONS
    J. Appl. Phys, Vol. 118, 045712, 2015 DOI: 10.1063/1.4927265

プレスの皆様へ:資料はリンク先に掲載されています。2013年以前のプレスリリース資料はこちら


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