TAKAGI & TAKENAKA Laboratory Group

Award〜Congratulations!

• JSAP lecture encouragement prize and IEEE EDS Japan Chapter Student Award

  Author ： Han jaehoon
  論文名 ：”貼り合わせInGaAsP/SiハイブリッドMOS型光変調器に関する検討”(2017：JSAP)
  論文名 ："Extremely High Modulation Efficiency III-V/Si Hybrid MOS Optical Modulator Fabricated by Direct Wafer Bonding"(2017：IEEE）
  
  

• 平成28年度学科長特別賞と平成28年度 電気学会東京支部 電気学術女性活動奨励賞を受賞しました。

  
  Author ： Chiaki Yokoyama（2017：学内、IEEJ）
  
  

• The 2015 Roger A. Haken Best Student Paper Award Updated !!

  

  Author ： Xiao Yu
  Title : "Experimental Study on Carrier Transport Properties in Extremely-Thin Body Ge-on-Insulator (GOI) p-MOSFETs with GOI Thickness down to 2nm”"
  (2016：IEDM)
  
  

• A prize from Uenohara foundations.

  
  

  Author : Kang Jian
  Title : "Ge-on-insulator基板を用いたGe CMOSフォトニクスに関する研究”
  (2015:電気電子情報学術振興財団)
  
  

• 2014thSchool of Engineering AWARD for Master thesis.

  
  

  AWARD for Master thesis
  Author : Koichi NISHI
  Title : "Study on Sb-based III-V-On-Insulator MOSFETs on Si." (2015)
  
  

• 2014th School of Engineering AWARD for Doctor thesis.

  
  

  AWARD for Doctor thesis
  Author : Younghyun Kim
  Title : "Study on strain-induced enhancement of plasma dispersion effect and free-carrier absorption for SiGe optional modulators/attenuators" (2015)
  
  

• 科学技術分野の文部科学大臣表彰における科学技術賞を研究部門で受賞しました。

  
  

  Shinichi TAKAGI
  業績名 ：CMOS中のキャリア輸送特性の理解と高性能化に関する研究
  （2015：科学技術分野の文部科学大臣表彰）
  
  

• 第6回応用物理学会シリコンテクノロジー分科会論文賞を受賞しました。

  Authors ：SangHyeon Kim(First Author), Yuki Ikku, Masafumi Yokoyama, Ryosho Nakane, Jian Li, Yung-Chung Kao, Mitsuru Takenaka, and Shinichi Takagi
  Title："Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors,"
  APPLIED PHYSICS LETTERS, vol. 105, 043504 (2014).
  （2015：応用物理学会　シリコンテクノロジー分科会）
  
  

• EDS Paul Rappaport Award.
  

  First Author ：R. Zhang,
  Authors ：P.-C. Huang, J.-C. Lin, N. Taoka, M. Takenaka, and S. Takagi,
  Title："High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Postoxidation,"
  IEEE Transactions on Electron Devices, vol. 60, no. 3, pp. 927 – 934, 2013.
  DOI: 10.1109/TED.2013.2238942（2014：IEDM）
  
  

• A prize from Uenohara foundations.

  
  

  Author : Cheng Yongpeng " (2014:電気電子情報学術振興財団)
  
  

• 2013rd School of Engineering AWARD for Master and Doctor thesis.

  
  

  AWARD for Master thesis : Author : Han Jaehoon
  Title : "Research on high-k/SiGe MOS interface using plasma post-nitridation. (2014)
  

  AWARD for Doctor thesis : Author : Shuhei Tanakamaru
  Title : "Design of Highly Reliable Solid-State Strage System. (2014)
  

  AWARD from the Dean of School of Engineering and School of Engineering AWARD for Doctor thesis.:Author : SangHyeon Kim
  Title : "Study on InGaAs-On-Insulator MOSFETs for III-V logic LSI on Si platform. (2014)
  
  

• IEEE PHOTONICS SOCIETY JAPAN CHAPTER Young Scientist Award.

  
  

  Author : Jian Kang
  Title : "Dark Current Suppression for Germanium Metal-Semiconductor-Metal Photodetector by GeO2 Passivation" (2013:The 20th Technical Meeting on Silicon Photonics)
  
  

• 2013 IEEE Andrew S. Grove AWARD

  
  

  Author : Shinichi Takagi
  Title : "For contributions to the understanding of transport properties in inversion layers of high-performance MOSFETs." (2013)
  
  

• 60th JSAP Spring Meeting,2013 Poster Award

  
  

  First Author : CHANG, Chih-Yu
  Authors : C.-Y.Chang , M.Yokoyama , S.-H.Kim, O,Ichikawa, T.Osada, M.Hata,, M. Takenaka and S. Takagi
  Title : ”Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks”
  Winners ; Chin.-Yu Chang , Masafumi Yokoyama , Sang-Hyeon Kim, Mitsuru Takenaka, Shinichi Takagi
  Affiliation : The University of Tokyo (2013：JSAP)
  
  

• 2012nd School of Engineering AWARD for Master thesis.

  
  

  Author : Nunetaka NOGUCHI
  Title : "Planer-type InGaAs TFETs with source regions formed by Zn diffusion. (2013)
  
  

• 2012nd 電気学会東京支部
  電気学術女性活動奨励賞を受賞。

  
  

  Author : Nozomi YOSHIDA（2013:IEEJ）
  
  

• 60th　JSAP lecture encouragement prize

  First Author : Zhang Rui
  Title : ”High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks”
  Authors : J. C. Lin, P. C. Huang, N. Taoka, M. Takenaka and S. Takagi (2013：JSAP)
  
  

• IEEE EDS Japan Chapter Student Award

  
  

  First Author : Sang-Hyeon Kim
  Title : "Sub-60 nm deeply scaled Extremely-thin Body InxGa1-xAs-On-Insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS Interface Buffer Engineering"
  Authors : M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O.Ichikawa, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi(2012 : VLSI symp.)
  
  

• IEEE EDS Japan Chapter Student Award

  
  

  First Author : Zhang Rui
  Title : "High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation"
  Authors : P. C. Huang, N. Taoka, M. Takenaka and S. Takagi(2012 : VLSI symp.)
  
  

• 2012 Excellent Doctor thesis Award.

  Author : Zhang Rui
  Title : "Formation of Ge Gate Stack Structures by Plasma Post Oxidation and Their Applications to Ge CMOS Devices" (2012：学内)
  
  

• YAMAZAKI-TEIICHI AWARD -

  
  
  

  Shinichi TAKAGI
  "Si MOSFETのチャネル内キャリア輸送特性の解明と高移動度化への先駆的貢献" (2012)
  ;第12回（平成24年度）山崎貞一賞　半導体及び半導体装置分野
   
  

• [ Interview ]Prof.TAKAGI has been picked up by Web NEWS. - YAMAZAKI-TEIICHI AWARD -

  Author :Shinichi TAKAGI
  "東芝の自由な気風が生んだ、高速MOSFETの先駆的研究――山崎貞一賞を受賞した東大の高木氏に聞く" (2012)
  
  Media ： Tech-On!（2012/12/18）
   

• ECS - The ELECTROCHEMICAL SOCIETY -Symposium on HIgh Dielectric Constant and Other Dielectric Materials for Nanoelectronics IX, The Best Paper Award.

  
  

  First Author :Shinichi TAKAGI
  Authors : R. Zhang, T. Hoshii, N. TAOKA and M. TAKENAKA
  "MOS Interface Control Technologies for III-V/Ge Channel MOSFETs" (The 220th Meeting, Fall 2011)
  
  

JSAP lecture encouragement prize

• 
  

  First Author : SangHyeon KIM
  Title : ”MOS界面バッファ層の導入とチャネルIn組成変調による極薄膜InxGa_1-xAs-OI MOSFETの高性能化”(2013：JSAP)
  
  

• The INC8 Japan Nano Day Best Poster Award.

  
  

  Author :SangHoon Shin
  "Experimental Characterization of MOS Interface Charges using Potential Fluctuation in Conductance Measurement" (2012)
  
  

• 2011 Faculty of Engineering and EE Department AWARDs for Bachelor thesis.

  
  

  Author :Han JAEHOON
  "MOS型光変調器実現に向けたSiGe MOS界面に関する研究" (2012)
  
  

• 2011 School of Engineering AWARD for Master thesis.

  
  

  Author :Rena SUZUKI
  "高誘電体膜を用いたInGaAs MOS構造の界面制御と絶縁膜薄膜化" (2012)
  
  

• 2011 GCOE program Excellent Paper Presentation Award.

  
  

  Author :SangHyeon KIM
  " Enhacement technologies of electron mobility in III-V-OI MOSFET" (2012)
  
  

• Excellent paper presentaion Award in Solid-state electronics and Opto-electronics seminar 2011.

  
  

  Author :Zhang Rui
  "High mobility Ge CMOSdevices with 1 nm EOT Al2O3 /GeOx gatestacksfabricated by plasma post oxidation" (2012)
  
  

• Thesis Award of The 3rd Division of Silicon Technology.

  
  

  Author : Rui Zhang，Takashi IWASAKI，Noriyuki TAOKA，Mitsuru TAKENAKA，Shinichi TAKAGI
  "Al2O3 /GeOx/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Post Oxidation" , Appl. Phys. Lett., vol. 98, 112902 (2011：JSAP)
  
  

• JSAP lecture encouragement prize

  First Author : Masafumi YOKOYAMA
  Authors : S. KIM, R. Zhang, N. TAOKA, Y. URABE, T. MAEDA, H. TAKAGI, T. YASUDA,, H. YAMADA, N. FUKUHARA, M. HATA, M. SUGIYAMA, Y. NAKANO, M. TAKENAKA and S. TAKAGI
  "基板貼り合わせ法を用いたIII-V/Ge CMOS トランジスタ集積化", 1a-P7-7 (2011：JSAP)
  
  

• IEEE EDS Japan Chapter Student Award

  
  SangHyeon KIM
  "High Performance Extremely-Thin Body III-V-On-Insulator MOSFETs on a Si Substrate with Ni-InGaAs　Metal S/D and MOS Interface Buffer Engineering"
  Zhang Rui
  "High Mobility Ge pMOSFETs with ~ 1nm Thin EOT Using Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation"
  IEDM (2011)
  

• KIM's paper has been picked up by Web NEWS.

  First Author : SangHyeon KIM
  "InGaAs buffer/channel structure boosts effective mobility 4.2x that of silicon."
  Semiconductor Today -
   

• Zhang's paper has been picked up by Web NEWS.

  First Author : Rui Zhang
  "1-nm-thick EOT High Mobility Ge n- and p-MOSFETs with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation."IEDM (2011)
  Tech-On! ELECTRO IQ -The Portal for Electronics Manufacturing-
   

• KIM's paper has been picked up by Web NEWS.

  First Author : SangHyeon KIM
  "Enhancement Technologies and Physical Understanding of Electron Mobility in III-V n-MOSFETs with Strain and MOS Interface Buffer Engineering."IEDM (2011)
  First Author : Noriyuki TAOKA
  "Impact of Fermi Level Pinning inside Conduction Band on Electron Mobility of InxGa1-xAs MOSFETs and Mobility Enhancement by Pinning Modulation."IEDM (2011)
  Tech-On! ELECTRO IQ -The Portal for Electronics Manufacturing-
   

• 2011 School of Engineering AWARD for Master thesis.

  Junkyo Suh
  "Strain Engineered Silicon Germanium on Insulator P-Channel Metal-Oxide-Semiconductor Field-Effect Transisotr by Ge Condensation" (2011)
  
  

• Yokoyama's paper has been picked up by News papers.

  First Author : Masafumi YOKOYAMA
  "First demonstration of the integrated III-V/Ge CMOS transistors with higher electron and hole mobilities ~ CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding ~
  The Chemical Daily(2011/6/13)　THE NIKKAN KOGYO SHIMBUN,LTD.(2011/6/15)
  
  

• 2011 Excellent Master thesis Award. and Dean of the School of Engineering AWARD

  
  

  First Author : SangHyeon KIM
  "Metal Source/Drain In III-V MOSFETs using Metal semiconductor Alloy "(2011)
  

• KIM's paper has been selected by the VLSI organizing committee as one of the highlight papers of the 2011 symposium.

  First Author : SangHyeon KIM
  "High Performance Extremely-Thin Body III-V-On- Insulator MOSFETs on a Si Substrate with Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering"VLSI symposium(2011)
  
  

• IEEE EDS Japan Chapter Student Award

  
  

  SangHyeon KIM
  "Self-aligned Metal Source/Drain In_xGa_1-xAs n-MOSFETs Using Ni-InGaAs Alloy"IEDM(2010)
  
  

• Kim's paper has been picked up by Web NEWS.

  First Author : SangHyeon KIM
  "Self-aligned Metal Source/Drain InxGa1-xAs n-MOSFETs Using Ni-InGaAs Alloy."IEDM (2010)
  Tech-On! ELECTRO IQ -The Portal for Electronics Manufacturing-
   

• Yokoyama's paper has been selected by the IEDM committee as one of the highlight papers of the 2010 meeting.

  First Author : Masafumi YOKOYAMA
  "Extremely-Thin-Body InGaAs-On-Insulator MOSFETs on Si Fabricated by Direct Wafer Bonding."IEDM(2010)
   

• Yokoyama's paper has been selected by the VLSI organizing committee as one of the highlight papers of the 2010 symposium.

  
  

  First Author : Masafumi YOKOYAMA
  "High Mobility III-V-On-Insulator MOSFETs on Si with ALD-Al203 BOX layers."VLSI symposium(2010)
  日経産業新聞(2010/6/25) The Chemical Daily(2010/6/16)　THE NIKKAN KOGYO SHIMBUN,LTD.(2010/6/16)
  
  

• 2009 Excellent Master thesis Award.

  
  

  First Author : Kiyohito MORII
  "気相ドーピング法によって形成したソース・ドレイン接合を有する高性能 GeO₂/Ge nMOSFETs "(2010)
  

• 57th JSAP Letter of thanks

  
  

  Masafumi YOKOYAMA
  "極薄ボディIII-V族半導体FET"JSAP(2010)
  Tech-On!NE NEWS（Web）,The Chemical Daily（Newspaper）
  
  

• IEEE EDS Japan Chapter Student Award

  

  Kiyohito MORII
  "High Performance GeO₂/Ge nMOSFETs with Source/Drain Junctions Formed by Gas Phase Doping"IEDM(2009)
  

• 2009 SSDM Paper Award

  
  

  K. Ikeda, Y. Yamashita, M. Harada, T. Yamamoto, S. Nakaharai, N. Hirashita,Y. Moriyama, T. Tezuka, N. Taoka, I. Watanabe, N. Hirose, N. Sugiyama and S.Takagi
  “High Mobility sub-60nm Gate Length Germanium-On-Insulator Channel pMOSFETs with Metal Source/Drain and TaN MIPS Gate”, SSDM (2008) p. 32-33
  

• IEEE EDS Japan Chapter Student Award

  
  

  Yosuke Nakakita
  "Interface-Controlled Self-Align Source/Drain Ge PMOSFETS UsingThermally-Oxidized GeO2 Interfacial Layers "(IEDM2008)
  

• 2007 Applied physics association lecture encouragement prize

  （Applied physics association）
  Dissanayake Sanjeewa
  

Winning record - events,sports, and more!

• Team Takagi and Takenaka lab won the futsal game.

  
  Sports event of Fall 2012(Electrical and Electronic Engineering Course).
  

  Member：K.SangHyeon, Min-Soo KIM, Younghyun Kim, Chang Chih-Yu, Seiya Takashima, WuKang Kim, Tatsuya Kayouda
   

• The third place synthesis winning a prize!! Team Takagi and Takenaka lab.

  
  Sports event of Fall 2009(Electrical and Electronic Engineering Course)
  

  Member(?)：T.Iwasaki, K.Tomiyama, R.Iida, K.Kuroda, Junkyo SUH, Sunghoon LEE, K.SangHyeon,Y.Zhao
   

• The third place synthesis winning a prize!! Team Takagi and Takenaka lab.

  
  Sports event of spring 2008(Electrical and Electronic Engineering Course)
  

  Member：T.Sasada, K.Tomiyama, S.Nakagawa, K.Morii, T.Iwasaki, K.SangHyeon, M.Inagaki
  (Preliminary contest tournament:Y.Zhao）