TAKAGI & TAKENAKA Laboratory Group

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Publications/index

Paper list of Takagi and Takenaka Group : index

2018 |2017 |2016 | 2015 | 2014 | 2013  | 2012 | 2011 | 2010 | 2009 | 2008 | Before 2007

Publications (2019)

[Journal Paper]  [International conference Paper]

Journal Papers

  1. Q. Li, C. P. Ho, S. Takagi, and M. Takenaka, “Optical phase modulators based on reverse-biased III-V/Si hybrid metal-oxide-semiconductor capacitors,” IEEE Photonics Technology Letters, Vol. 32, No. 6, pp. 345–348, March 2020. DOI: 10.1109/LPT.2020.2973174
  2. C.-M. Lim, Z. Zhao, K. Sumita, K. Toprasertpong, M. Takenaka and S. Takagi, “Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by smart-cut process,” AIP Advances, vol. 10, 015045, January 2020. DOI: 10.1063/1.5132881
  3. S. Takagi, K. Kato, and M. Takenaka, “Group IV based bi-layer tunneling field effect transistor,” ECS Trans., vol. 93, no. 1, pp. 23–27, 2019 (invited). DOI: 10.1149/09301.0023ecst
  4. K. Kato, H. Matsui, H. Tabata, M. Takenaka, and S. Takagi, “Fabrication and electrical characteristics of ZnSnO/Si bilayer tunneling filed-effect transistors,” IEEE Journal of the Electron Devices Society, vol. 7, No. 1, 1201– 1208, 2019. DOI: 10.1109/JEDS.2019.2933848
  5. T. Gotow, M. Mitsuhara, T. Hoshi, H. Sugiyama, M. Takenaka, and S. Takagi, “Performance enhancement of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunneling field-effect transistors with abrupt source impurity profile,” J. Appl. Phys., vol. 126, 214502, 2019. DOI: 10.1063/1.5121567
  6. M. Ke, M. Takenaka, and S. Takagi, “Reduction of slow trap density in Al2O3/GeOxNy/n-Ge MOS interfaces by PPN-PPO process,” IEEE Trans. Electron Devices, vol. 66, no. 12, pp. 5060–5064, 2019. DOI: 10.1109/TED.2019.2948074
  7. S.-H. Yoon, K. Kato, C. Yokoyama, D.-H. Ahn, M. Takenaka, and S. Takagi, “Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties,” J. Appl. Phys., vol. 126, 184501, 2019. DOI: 10.1063/1.5111630
  8. T. Gotow, M. Mitsuhara, T. Hoshi, H. Sugiyama, M. Takenaka, and S. Takagi, “Improvement of p-type GaAs0.51Sb0.49 metal-oxide-semiconductor interface properties by using ultrathin In0.53Ga0.47As interfacial layers,” J. Appl. Phys., vol. 125, 214504, 2019. DOI: 10.1063/1.5096410
  9. T.-E. Lee, K. Kato, M. Ke, K. Toprasertpong, M. Takenaka, and S. Takagi, “Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks,” Microelectronic. Eng., vol. 214, pp. 87–92, June 2019. DOI: 10.1016/ j.mee.2019.05.005
  10. C.-P. Ho, Z. Zhao, Q. Li, S. Takagi, and M. Takenaka, “Mid-infrared tunable Vernier filter on a germanium-on-insulator photonic platform,” Optics Letters, vol. 44, no. 11, pp. 2779–2782, June 2019.
  11. K. Kato, H. Matsui, H. Tabata, M. Takenaka, and S. Takagi, “ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties,” J. Appl. Phys., vol. 125, 195701, 2019. DOI: 10.1063/1.5088893
  12. K. Kato, H. Matsui, H. Tabata, M. Takenaka, and S. Takagi, “Bilayer tunneling field effect transistor with oxide-semiconductor and group-IV semiconductor hetero junction: Simulation analysis of electrical characteristics,” AIP Advances, vol. 9, 055001, May 2019. DOI: 10.1063/1.5088890

[Journal Paper]  [International conference Paper]

International Conference Papers

  1. Q. Li, C-. P. Ho, J. Fujikata, M. Noguchi, S. Takahashi, K. Toprasertpong, S. Takagi, and M. Takenaka, “Low parasitic capacitance III-V/Si Hybrid MOS optical modulator toward high-speed modulation,” Optical Fiber Communication Conference (OFC2020), Th2A.16, San Diego, 8–12 March 2020.
  2. S. Ohno, Q. Li, N. Sekine, J. Fujikata, M. Noguchi, S. Takahashi, K. Toprasertpong, S. Takagi, and M. Takenaka, “Taper-less III-V/Si hybrid MOS optical phase shifter using ultrathin InP membrane,” Optical Fiber Communication Conference (OFC2020), M2B.6, San Diego, 8–12 March 2020.
  3. Z. Zhao, C.-P. Ho, K. Toprasertpong, S. Takagi, and M. Takenaka, “Monolithic Germanium PIN Waveguide Photodetector Operating at 2 μm Wavelengths,” Optical Fiber Communication Conference (OFC2020), W4G.3, San Diego, 8–12 March 2020.
  4. S. Takagi, K. Sumita, K. Jo, C.-M. Lim, K. Kato, D.-H. Ahn, K. Toprasertpong, and M. Takenaka, “MOS Device Technology for advanced logic LSI,” International Workshop on Nanodevice Technologies (IWNT), Hiroshima, Japan, 5 March 2020 (invited).
  5. M. Ke, M. Takenaka, and S. Takagi, “Contributions of electron and hole slow traps to hysteresis in C-V characteristics of Al2O3/GeOx/p-Ge MOS capacitors,” 50th IEEE Semiconductor Interface Specialists Conference (SISC), 1.3, San Diego, 11–14 December 2019.
  6. T.-E. Lee, K. Toprasertpong, M. Takenaka, and S. Takagi, “Impact of atomic layer deposition high-k materials on Si0.78Ge0.22 MOS interface properties with TiN gate,” 50th IEEE Semiconductor Interface Specialists Conference (SISC), 2.3, San Diego, 11–14 December 2019.
  7. K. Toprasertpong, M. Takenaka, and S. Takag, “Direct observation of interface charge behaviors in FeFET by quasi-static split C-V and Hall techniques: Revealing FeFET operation,” International Electron Devices Meeting (IEDM2019), 23.7, San Francisco, 7–11 December 2019.
  8. K.-W. Jo, C.-M. Lim, W.-K. Kim, K. Toprasertpong, M. Takenaka, and S. Takag, “Strain and surface orientation engineering in extremely-thin body Ge and SiGe-on-insulator MOSFETs fabricated by Ge condensation,” International Electron Devices Meeting (IEDM2019), 29.1, San Francisco, 7–11 December 2019.
  9. S. Takagi, K. Kato, M. Takenaka, “Bi-layer tunneling FET using group IV/oxide semiconductor hetero-structure,” 8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII), Sendai, Japan, 27–30 November 2019 (invited).
  10. Z. Zhao, C.-P. Ho, S. Takagi, and M. Takenaka, “Mid-infrared Ge variable optical attenuator formed by spin-on-glass doping,” 9th International Symposium on Photonics and Electronics Convergence (ISPEC2019), P-6, Tokyo, 26–27 November 2019.
  11. J. Fujikata, J.-H. Han, S. Takahashi, K. Kawashita, H. Ono, S.-H. Jeong, Y. Ishikawa, M. Takenaka, and T. Nakamura, “Si optical modulator with strained SiGe layer and Ge photodetector with lateral PIN junction for 56 Gbaud optical transceiver,” 9th International Symposium on Photonics and Electronics Convergence (ISPEC2019), P-7, Tokyo, 26–27 November 2019.
  12. Y. Miyatake, N. Sekine, K. Toprasertpong. S. Takagi, and M. Takenaka, “Optimization of grating couplers on SOI using artificial intelligence,” 9th International Symposium on Photonics and Electronics Convergence (ISPEC2019), P-8, Tokyo, 26–27 November 2019.
  13. S. Ohno, K. Toprasertpong, S. Takagi, and M. Takenaka, “Microring resonator crossbar arrays for optical neural network,” 9th International Symposium on Photonics and Electronics Convergence (ISPEC2019), P-9, Tokyo, 26–27 November 2019.
  14. C.-P. Ho, Z. Zhao, Q. Li, S. Takagi, and M. Takenaka, “Implementation of coupled-resonator-induced-transparency on germanium-on-insulator photonic platform,” 9th International Symposium on Photonics and Electronics Convergence (ISPEC2019), P-10, Tokyo, 26–27 November 2019.
  15. Q. Li, C.-P. Ho, S. Takagi, and M. Takenaka, “Integration of III-V/Si hybrid MOS optical phase shifter with Si racetrack cavity in critical coupling condition for low-energy optical modulation,” 9th International Symposium on Photonics and Electronics Convergence (ISPEC2019), P-11, Tokyo, 26–27 November 2019.
  16. N. Sekine, S. Takagi, and M. Takenaka, “Quantum well intermixing for III-V-OI wafer using P2 hot ion implantation,” 9th International Symposium on Photonics and Electronics Convergence (ISPEC2019), P-14, Tokyo, 26–27 November 2019.
  17. S. Takagi, T.-E. Lee, M. Ke, S.-H. Yoon, D.-H Ahn, K. Kato, K. Toprasertpong and M. Takenaka, “Importance of semiconductor MOS interface control on advanced electron devices,” International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Technology (IWDTF 2019), K1-2, Tokyo Institute of Technology, Tokyo, Japan, November 18-20, 2019 (plenary).
  18. S. Takagi, K. Kato and M. Takenaka, “Group IV/oxide semiconductor bi-layer tunneling FET,” IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conferene (SOI-3D2019), San Jose, USA, 14–19 October 2019 (invited).
  19. S. Takagi, K. Kato, D.-H. Ahn, T. Gotow, R. Takaguchi, T. E. Bae, K. Toprasertpong, and M. Takenaka, “Tunneling FET device technology for ultra-low power integrated circuits,” 236th ECS Meeting, Symposium G03, Hilton Atlanta, Atlanta, USA, 13–17 October 2019 (invited).
  20. K. Sumita, J. Takeyasu, K. Kato, K. Toprasertpong, M. Takenaka and S. Takagi, “Fabrication of high quality InAs-on-Insulator structures by Smart Cut process with reuse of InAs wafers,” IEEE International 3D Systems Integration Conference (3DIC2019), Sendai, Japan, 8–10 October 2019.
  21. Q. Li, C.-P. Ho, S. Takagi, and M. Takenaka, “Si racetrack modulator with III-V/Si hybrid MOS optical phase shifter,” European Conference on Optical Communication (ECOC 2019), Tu.2.A.5, Dublin, Irland, 22–26 September 2019.
  22. Z. Zhao, C.-P. Ho, S. Takagi, and M. Takenaka, “Efficient germanium variable optical attenuator at 1.95μm wavelength using spin-on-glass doping,” European Conference on Optical Communication (ECOC 2019), P19, Dublin, Irland, 22–26 September 2019.
  23. S. Ohno, K. Toprasertpong, S. Takagi, and M. Takenaka, “Crossbar array of Si microring resonators for deep learning accelerator,” International Conference on Solid State Devices and Materials (SSDM), B-2-04, Nagoya, 2–5 Sept. 2019.
  24. Y. Miyatake, N. Sekine, K. Toprasertpong, S. Takagi, and M. Takenaka, “Computational design of high-efficiency grating coupler based on deep learning,” International Conference on Solid State Devices and Materials (SSDM), B-2-05, Nagoya, 2–5 Sept. 2019.
  25. K. Kato, H. Matsui, H. Tabata, T. Mori, Y. Morita, T. Matsukawa, M. Takenaka, S. Takagi, “Performance improvement in ZnSnO/Si bilayer TFET by W/Al2O3 gate stack,” International Conference on Solid State Devices and Materials (SSDM), N-3-03, Nagoya, 2–5 Sept. 2019.
  26. K. Kato, K. Jo, H. Matsui, H. Tabata, T. Mori, Y. Morita, T. Matsukawa, M. Takenaka, S. Takagi, “Demonstration of n- and p-TFET operations in a single ZnSnO/SiGe bilayer structure,” International Conference on Solid State Devices and Materials (SSDM), N-3-04, Nagoya, 2–5 Sept. 2019.
  27. H. Tang, S. Takagi, and M. Takenaka, “Numerical analysis of waveguide-integrated graphene thermal emitter,” International Conference on Solid State Devices and Materials (SSDM), PS-5-01, Nagoya, 2–5 Sept. 2019.
  28. R. Nur, K. Toprasertpong, S. Takagi, and M. Takenaka, “Photoresponse enhancement in MoS2 phototransistors by the photogating effect,” International Conference on Solid State Devices and Materials (SSDM), PS-8-21, Nagoya, 2–5 Sept. 2019 (Late News).
  29. C.-H. Lim, Z. Zhao, K. Sumita, K. Toprasertpong, M. Takenaka, and S. Takagi, “Effects of hydrogen ion implantation dose on electrical and physical properties of (100) and (111) Ge-on-insulator substrates fabricated by Smart-cut process,” International Conference on Solid State Devices and Materials (SSDM), N-4-03, Nagoya, 2–5 Sept. 2019.
  30. K. Sumita, J. Takeyasu, K. Kato, K. Toprasertpong, M. Takenaka, and S. Takagi, “Accurate evaluation of contact resistivity between InAs/Ni-InAs alloy,” International Conference on Solid State Devices and Materials (SSDM), N-6-01, Nagoya, 2–5 Sept. 2019.
  31. J. Fujikata, J. Han, S. Takahashi, K. Kawashita, H. Ono, S.-H. Jeon, Y. Ishikawa, M. Takenaka, T. Nakamuara, “Si optical modulator with strained SiGe layer and Ge photodetector with lateral PIN junction for 56 Gbaud optical transceiver,” International Conference on Solid State Devices and Materials (SSDM), B-2-02, Nagoya, 2–5 Sept. 2019.
  32. C.-P. Ho, Z. Zhao, Q. Li, S. Takagi, and M. Takenaka, “Coupled-resonator-induced-transparency on germanium-on-insulator mid-infrared platform,” International Conference on Group IV Photonics (GFP2019), FD5, Singapore, 28–30 August 2019. DOI: 10.1109/GROUP4.2019.8853937
  33. S. Takagi, M. Ke, D.-H Ahn, T.-E. Lee, S.-H. Yoon, K. Kato, and M. Takenaka, “MOS interface defect control in alternative channel materials,” 21st Conference on Insulating Films on Semiconductors (INFOS 2019), 7A.3, Cambridge, UK, 30 June – 3 July 2019 (invited).
  34. T.-E. Lee, K. Kato, M. Takenaka and S. Takagi, “Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks,” 21st Conference on Insulating Films on Semiconductors (INFOS 2019), 7A.4, Cambridge, UK, 30 June – 3 July 2019.
  35. S.-H. Yoon, K. Kato, C. Yokoyama, M. Takenaka and S. Takagi, “Re-examination of Sulfur treatment effects on Al2O3/InGaAs MOS interface properties,” 21st Conference on Insulating Films on Semiconductors (INFOS 2019), 7A.1, Cambridge, UK, 30 June – 3 July 2019.
  36. S. Takagi, K. Kato, K. Sumita, K. Jo, C.-M. Lim, R. Takaguchi, D.-H. Ahn, J. Takeyasu, K. Toprasertpong, and M. Takenaka, “Advanced MOS device technology for low power logic LSI,” 26th International Conference Mixed Design of Integrated Circuits and Systems (MIXDES 2019), Rzeszow, Poland, 27-29 June 2019 (plenary).
  37. M. Takenaka and S. Takagi, “Exploring graphene-based optical phase modulator,” 10th International Conference on Materials for Advanced Technologies (ICMAT 2019), Symposium BB-04, Singapore, 23-28 June 2019 (invited).
  38. M. Takenaka and S. Takagi, “Ge-on-insulator platform for communication and sensing,” Progress In Electromagnetics Research Symposium (PIERS2019), Rome, 17–20 June 2019 (invited).
  39. T.-E. Lee, K. Kato, M. Ke, M. Takenaka, and S. Takagi, “Improvement of SiGe MOS interface properties with a wide range of Ge contents by using TiN/Y2O3 gate stacks with TMA passivation,” VLSI Symposium, T9-5, Kyoto, Japan, 9-14 June 2019. DOI: 10.23919/VLSIT.2019.8776523
  40. M. Takenaka, “Hybrid Si photonic integrated circuits for AI computing,” Tsinghua University-the University of Tokyo Joint Symposium, Tsinghua University, Beijing, China, 28 May 2019.
  41. N. Sekine, S. Takagi, and M. Takenaka, “Investigation of optical loss and bandwidth of InP-organic hybrid optical modulator,” Compound Semiconductor Week (CSW2019), TuA3-3, Nara, 19–23 May 2019.
  42. Q. Li, J.-H. Han, T.-E. Lee, S. Takagi, and M. Takenaka, “Equivalent oxide thickness scaling for efficient III-V/Si hybrid MOS optical phase shifter,” Compound Semiconductor Week (CSW2019), TuA3-4, Nara, 19–23 May 2019.
  43. S. Ohno, S. Takagi, and M. Takenaka, “Numerical Analysis of III-V/Si Hybrid MOS Microdisk Modulator,” Compound Semiconductor Week (CSW2019), TuA3-5, Nara, 19–23 May 2019.
  44. S. Sumita, J. Takeyasu, K. Kato, M. Takenaka, and S. Takagi, “Effects of thermal annealing on film quality of InAs-On-Insulator structures fabricated by Smart Cut method,” Compound Semiconductor Week (CSW2019), TuC2-6, Nara, 19–23 May 2019.
  45. S. Takagi, K. Kato, K. Sumita, K. Jo, R. Takaguchi, D.-H. Ahn, K. Toprasertpong, M. Takenaka, “Advanced MOSFETs and TFETs using alternative semiconductors for ultralow power logic applications,” MRS Spring Meeting, Symposium EP09, Pheonix, USA, 22–26 April 2019 (invited).

Press Release

  • School of engineering The University of Tokyo - Press Releases July 2017
    Efficient low-loss InGaAsP/Si hybrid MOS optical modulator
    Associate Professor Mitsuru Takenaka, Department of Electrical Engineering and Information

    Press release page of School of engineering the University of Tokyo. / Press release page of New Energy and Industrial Technology Development Organization.

  • JST - Press Releases December 2014
    New Tunneling Field Effect Transistors operating at extremely-low power consumption - Utilizing a Structure Combining strained-Silicon with Germanium -(Jump to JST site)
    Professor Shinichi Takagi ,Department of Electrical Engineering and Information Systems

    Press release page of School of engineering the University of Tokyo. / Facebook / twitter

  • School of engineering The University of Tokyo - Press Releases April 2014
    Strain enhances the conversion efficiency from electrical to optical signal ーToward low-power photonic integrated circuits by SiGe ー
    Associate Professor Mitsuru Takenaka & Professor Shinichi Takagi , Department of Electrical Engineering and Information Systems

  • Previews Press Release

     


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