TAKAGI & TAKENAKA Laboratory Group

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Publications/index

Paper list of Takagi and Takenaka Group : index

2016 | 2015 | 2014 | 2013  | 2012 | 2011 | 2010 | 2009 | 2008 | Before 2007

Publications (2017)

[Journal Paper]  [International conference Paper]

Journal Papers

  1. M. Takenaka and S. Takagi, “InP-based photonic integrated circuit platform on SiC wafer,” Optics Express, vol. 25, no. 24, pp. 29993-30000, 2017. DOI: 10.1364/OE.25.029993
  2. T. Gotow, M. Mitsuhara, T. Hoshi, H. Sugiyama, M. Takenaka, and S. Takagi, “Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors,” J. Appl. Phys., vol. 122, 174503, 2017. DOI: 10.1063/1.4993823
  3. D.-H. Ahn, S.-M. Ji, M. Takenaka, and S. Takagi, “Design and properties of planar-type tunnel FETs using In0.53Ga0.47As/InxGa1-xAs/In0.53Ga0.47As quantum well,” J. Appl. Phys., vol. 122, 135704, 2017. DOI: 10.1063/1.4992005
  4. C.-Y. Chang, K. Endo, K. Kato, M. Takenaka, and S. Takagi, “Modulation of sub-threshold properties of InGaAs MOSFETs by La2O3 gate dielectrics,” AIP Advances, vol. 7, 095215, 2017. DOI: 10.1063/1.4999958
  5. J.-H. Han, F. Boeuf, J. Fujikata, S. Takahashi, S. Takagi, and M. Takenaka, “Efficient low-loss InGaAsP/Si hybrid MOS optical modulator,” Nat. Photonics, vol. 11, no. 8, pp. 486–490, Jul. 2017. DOI: 10.1038/nphoton.2017.122
  6. F. Boeuf, J.-H. Han, S. Takagi, and M. Takenaka, “Benchmarking Si, SiGe and III-V/Si hybrid SIS Optical Modulators for Datacenter Applications,” J. Light. Technol., vol. 35, no. 18, pp. 4047–4055, 2017. DOI: 10.1109/JLT.2017.2728365
  7. T. H. Xiao, Z. Zhao, W. Zhou, M. Takenaka, H. K. Tsang, Z. Cheng, and K. Goda, “Mid-infrared germanium photonic crystal cavity,” Optics Letters, vol. 42, no. 15, pp. 2882 – 2885, 2017. DOI: 10.1364/OL.42.002882
  8. D. -H. Ahn, S.-H. Yoon, M. Takenaka and S. Takagi, “Effects of HfO2/Al2O3 gate stacks on electrical performance of planar-type InxGa1-xAs tunneling Field-Effect Transistors”, Appl. Phys. Express., Vol. 10, 084201, 2017. DOI: 10.7567/APEX.10.084201
  9. J. Kang, Z. Cheng, W. Zhou, T.-H. Xiao, K.-L. Gopalakrisna, M. Takenaka, H. K. Tsang, and K. Goda, “Focusing subwavelength grating coupler for mid-infrared suspended membrane germanium waveguides,” Optics Letters, vol. 42, no. 11, pp. 2094 – 2097, 2017. DOI: 10.1364/OL.42.002094
  10. S. -H. Yoon, C.-Y. Chang, D. -H. Ahn, M. Takenaka, and S. Takagi, “Interface state generation of Al2O3/InGaAs MOS structures by electrical stress”, Microelectronic Engineering, Vol. 178, pp. 313-317, 2017. DOI: 10.1016/j.mee.2017.05.015
  11. M. Ke, M. Takenaka, S. Takagi, “Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers”, Microelectronic Engineering, Vol. 178, pp. 132-136, 2017. DOI: 10.1016/j.mee.2017.04.021
  12. C.-Y. Chang, C. Yokoyama, M. Takenaka, and S. Takagi, “Impact of La2O3/InGaAs MOS Interfaces on the Performance of InGaAs MOSFETs,” IEEE Trans. Electron Devices, vol. 64, no. 6, pp. 2519 – 2525, 2017. DOI: 10.1109/TED.2017.2696741

[Journal Paper]  [International conference Paper]

International Conference Papers

  1. K. Kato, H. Matsui, H. Tabata, M. Takenaka and S. Takagi, “Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment,” International Electron Devices Meeting (IEDM’17), 15.6, San Francisco, 2-6 December 2017.
  2. M. Takenaka and S. Takagi, “High-efficiency phase modulation based on Si hybrid MOS structure,” Progress In Electromagnetics Research Symposium (PIERS2017), 19-22 November 2017 (invited).
  3. S. Takagi and M. Takenaka, “Ultra-low power MOSFET and tunneling FET technologies using III-V and Ge,” IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), E.1, Miami Marriott Biscayne Bay, USA, 22-25 October 2017 (invited).
  4. S. Takagi. D.-H Ahn, T. Gotow, K. Nishi, T.-E. Bae, T. Katoh, R. Matsumura, R. Takaguchi, K. Kato, and M. Takenaka, “III-V/Ge-based Tunneling MOSFET,” 5th Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop, Berkeley, USA, 19-20 October 2017 (invited).
  5. T.-E. Bae, R. Suzuki, R. Nakane, M. Takenaka, and S. Takagi, “Effects of Ge-source impurity concentration on electrical characteristics of Ge/Si hetero-junction tunneling FETs,” 5th Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop, Berkeley, USA, 19-20 October 2017.
  6. M. Takenaka, J. Kang, T. Fujigaki, and S. Takagi, “Near-infrared and mid-infrared integrated photonics based on Ge-on-insulator platform,” IEEE Photonics Conference (IPC 2017), MB.3.1, Orlando, Florida, USA, 1-5 October 2017 (invited).
  7. S. Takagi, M. Ke, C. Y. Chang, C. Yokoyama, M. Yokoyama, T. Gotow, K. Nishi, S. Yoon, and M. Takenaka, “MOS interface defect control in Ge/III-V gate stacks,” 232nd ECS Meeting, Symposium D01, 830, National Harbor, USA, 1-5 October 2017 (invited).
  8. S. Takagi, D. H. Ahn, M. Noguchi, S. Yoon, T. Gotow, K. Nishi, M. Kim, T. E. Bae, T. Katoh, R. Matsumura, R. Takaguchi, and M. Takenaka, “Low power tunneling FET technologies using Ge/III-V materials,” 232nd ECS Meeting, Symposium G03, 1142, National Harbor, USA, 1-5 October 2017 (invited).
  9. K. Kato, H. Matsui, H. Tabata, M. Takenaka, and S. Takagi, “High performance top-gate zinc oxide thin film transistor (ZnO TFT) by combination of post oxidation and annealing,” International Conference on Solid State Devices and Materials (SSDM2017), E-2-05, Sendai, 19-22 September 2017.
  10. T. -E. Bae, Y. Wakabayashi, R. Nakane, M. Takenaka, and S. Takagi, “Performance improvement of Ge-source/Si-channel hetero-junction tunneling FETs: effects of annealing gas and drain doping concentration,” International Conference on Solid State Devices and Materials (SSDM2017), E-3-03, Sendai, 19-22 September 2017.
  11. R. Takaguchi, R. Matsumura, T. Katoh, M. Takenaka, and S. Takagi, “Ge p-channel tunneling FETs with steep phosphorus profile source junctions,” International Conference on Solid State Devices and Materials (SSDM2017), E-3-04, Sendai, 19-22 September 2017.
  12. R. Matsumura, T. Katoh, R. Takaguchi, M. Takenaka, and S. Takagi, “Ge-on-insulator tunneling FET with abrupt source junction by snowplow effect of NiGe,” International Conference on Solid State Devices and Materials (SSDM2017), PS-3-01, Sendai, 19-22 September 2017.
  13. T. Katoh, R. Matsumura, R. Takaguchi, M. Takenaka, and S. Takagi, “Performance enhancement of GOI tunneling FETs with source junctions formed by low energy BF2 ion implantation,” International Conference on Solid State Devices and Materials (SSDM2017), PS-3-02, Sendai, 19-22 September 2017.
  14. Q. Li, S. Takagi, and M. Takenaka, “Low-crosstalk optical switch with InGaAsP/Si hybrid MOS optical phase shifter,” International Conference on Solid State Devices and Materials (SSDM2017), PS-7-02, Sendai, 19-22 September 2017.
  15. Y. Yamaguchi, S. Takagi, and M. Takenaka, “Low-optical-loss graphene-based phase modulator operating at mid-infrared wavelength,” International Conference on Solid State Devices and Materials (SSDM2017), PS-7-03, Sendai, 19-22 September 2017.
  16. F. Boeuf, N. Sekine, S. Takagi, and M. Takenaka, “Performance benchmarking of InGaAsP, Si0.8Ge0.2 and Si-based photonics homojunction and heterojunction PN modulators,” International Conference on Solid State Devices and Materials (SSDM2017), H-8-02, Sendai, 19-22 September 2017.
  17. M. Takenaka, “Electronic-photonic integrated circuits based on heterogeneous integration of Ge/III-V on Si,” Silicon Photonic Workshop, European Conference on Optical Communication (ECOC 2017), Gothenburg, 17 September 2017 (invited).
  18. M. Ke, M. Takenaka, and S. Takagi, “Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers,” 47th European Solid-State Device Conference (ESSDERC 2017), C4L-G2, Leuven, Belgium, 11-14 September 2017.
  19. J. Fujikata, K. Kinoshita, J. Han, T. Horikawa, S. Takahashi, K. Yashiki, M. Kurihara, Y. Hagihara, M. Takenaka, T. Nakamura, K. Kurata, and T. Mogami, “High-Performance Si optical modulator with strained p-SiGe layer and its application to 25 Gbps optical transceiver,” International Conference on Group IV Photonics (GFP2017), WD.3, Grand Hyatt Berlin, Berlin, Germany, 23-25 August 2017.
  20. Y. Yamaguchi, S. Takagi, and M. Takenaka, “Pure phase modulation based on graphene operating at wavelength of 3000 nm,” 24th Congress of the international Commission for Optics (ICO-24), Th3J-06, Keio Plaza Hotel, Tokyo, Japan, 21-25 August 2017.
  21. N. Sekine, J.-H. Han, S. Takagi, and M. Takenaka, “Investigation on Mg ion implantation for carrier-depletion InGaAsP optical modulator with vertical PN junction,” 24th Congress of the international Commission for Optics (ICO-24), Th1J-04, Keio Plaza Hotel, Tokyo, Japan, 21-25 August 2017.
  22. Q. Li, J.-H. Han, F. Boeuf, S. Takagi, and M. Takenaka, “Structure optimization of InGaAsP/Si hybrid MOS optical modulator for high-efficiency phase modulation,” 24th Congress of the international Commission for Optics (ICO-24), Tu2J-03, Keio Plaza Hotel, Tokyo, Japan, 21-25 August 2017.
  23. T. Fujigaki, J. Kang, S. Takagi, and M. Takenaka, “Numerical analysis of Ge thermo-optic switch with air insulator structure,” 24th Congress of the international Commission for Optics (ICO-24), Tu2J-05, Keio Plaza Hotel, Tokyo, Japan, 21-25 August 2017.
  24. S. H. Yoon, C.-Y. Chang, D. H. Ahn, M. Takenaka and S. Takagi, “Interface state generation of Al2O3/InGaAs MOS structures by electrical stress,” 20th Conference on Insulating Films on Semiconductors (INFOS 2017), ThuB1.2, Potsdam, Germany, 27-30 June 2017.
  25. M. Ke, M. Takenaka and S. Takagi, “Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers,” 20th Conference on Insulating Films on Semiconductors (INFOS 2017), ThuA2.2, Potsdam, Germany, 27-30 June 2017.
  26. M. Takenaka and S. Takagi, “Evaluation of interfacial properties of MoS2,” 9th International Conference on Materials for Advanced Technologies (ICMAT 2017), Symposium H-08, 170654, Singapore, 18-23 June 2017 (invited).
  27. S. Takagi and M. Takenaka, “Low power III-V MOSFETs and TFETs on Si platform,” 9th International Conference on Materials for Advanced Technologies (ICMAT 2017), Symposium A, 171167, Singapore, 18-23 June 2017 (invited).
  28. S. Saito, A. Z. Al-attili, D. Burt, K. Oda, M. Takenaka, N. Higashitarumizu, Y. Ishikawa, “Germanium light sources for silicon photonics,” 9th International Conference on Materials for Advanced Technologies (ICMAT 2017), Symposium B, 170062, Singapore, 18-23 June 2017 (invited).
  29. M. Takenaka, “Heterogeneous Integration of Ge, III-V, and 2D on Si – from More Moore to Beyond CMOS –” VLSI Symposium, Short course, Kyoto, Japan, 5-8 June 2017.
  30. W.-K. Kim, M. Takenaka, and S. Takagi, “High performance 4.5-nm-thick compressively-strained Ge-on-insulator pMOSFETs fabricated by Ge condensation with optimized temperature control,” VLSI Symposium, 9-3, Kyoto, Japan, 5-8 June 2017.
  31. S. Takagi, D. H. Ahn, T. Gotow, M. Noguchi, K. Nishi, S.-H. Kim, M. Yokoyama, C.-Y. Chang, S.-H. Yoon, C. Yokoyama and M. Takenaka, “III-V-based low power CMOS devices on Si platform,” IEEE International Conference on Integrated Circuit Design and Technology (ICICDT), A1, Austin, USA, 23-25 May 2017 (invited).
  32. S. Takagi and M. Takenaka, “III–V/Ge MOSFETs and TFETs for ultra-low power logic LSIs,” International Symposium on VLSI technology, System and Applications (VLSI-TSA2017), T3-2, Hsinchu, Taiwan, 24-27 April 2017 (invited). DOI: 10.1109/VLSI-TSA.2017.7942467
  33. M. Takenaka and S. Takagi, “Exploring interfacial properties of pristine MoS2 MOS interface,” MRS Spring Meeting, Symposium ED7, 7.05, Pheonix, USA, 17-21 April 2017 (invited).
  34. J. Fujikata, J. Han, M. Noguchi, S. Takahashi, M. Takenaka, and T. Nakamura, “High Speed and highly efficient Si optical modulator with in-situ B doped strained SiGe layer,” International Conference on Nanophotonics and Nanooptoelectronics (ICNN2017), Pacifico-Yokohama, 18-21 April 2017 (invited).
  35. M. Takenaka, “Si photonics based on heterogeneous integration,” Tsinghua University-the University of Tokyo Joint Symposium, Tsinghua University, Beijing, China, 14 April 2017.
  36. M. Takenaka and S. Takagi, “Photonic integrated circuit platform using III-V on SiC wafer,” European Conference on Integrated Optics (ECIO'17), WP1.1, Eindhoven, 3-5 April 2017.

Press Release

  • School of engineering The University of Tokyo - Press Releases July 2017
    Efficient low-loss InGaAsP/Si hybrid MOS optical modulator
    Associate Professor Mitsuru Takenaka, Department of Electrical Engineering and Information

    Press release page of School of engineering the University of Tokyo. / Press release page of New Energy and Industrial Technology Development Organization.

  • JST - Press Releases December 2014
    New Tunneling Field Effect Transistors operating at extremely-low power consumption - Utilizing a Structure Combining strained-Silicon with Germanium -(Jump to JST site)
    Professor Shinichi Takagi ,Department of Electrical Engineering and Information Systems

    Press release page of School of engineering the University of Tokyo. / Facebook / twitter

  • School of engineering The University of Tokyo - Press Releases April 2014
    Strain enhances the conversion efficiency from electrical to optical signal ーToward low-power photonic integrated circuits by SiGe ー
    Associate Professor Mitsuru Takenaka & Professor Shinichi Takagi , Department of Electrical Engineering and Information Systems

  • Previews Press Release

     


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